Wavelenght variable semiconductor laser element, apparatus and method for controlling the same

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	Wavelenght variable semiconductor laser element, apparatus and method for controlling the same
其他题名	Wavelenght variable semiconductor laser element, apparatus and method for controlling the same
	FUJIWARA, NAOKI; ISHII, HIROYUKI; OOHASHI, HIROMI; OKAMOTO, HIROSHI
	2010-10-20
专利权人	NIPPON TELEGRAPH AND TELEPHONE CORPORATION
公开日期	2010-10-20
授权国家	欧洲专利局
专利类型	发明申请
摘要	A control method for a wavelength tunable semiconductor laser device including an active region (2,11a) for oscillating a laser beam, a wavelength tuning region (4,11b) for shifting a wavelength of the laser beam, and a thermal compensation region (4,11c) adjacent to the wavelength tuning region (4,11b) for converting most of the inputted electric power to heat, when a laser beam is oscillated from the wavelength tunable semiconductor laser device, comprising measuring an electric current-voltage characteristic of each of the wavelength tuning region and the thermal compensation region, finding an electric current-electric power characteristic of each of the wavelength tuning region and the thermal compensation region from the electric current-voltage characteristics is disclosed. Further, on the basis of the electric current-voltage characteristics and the electric current-electric power characteristics, determining and controlling an electric current or voltage applied to each of the wavelength tuning region (4,11b) and the thermal compensation region (4,11c) so that the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.
其他摘要	一种波长可调半导体激光器件的控制方法，包括用于振荡激光束的有源区（2,11a），用于移动激光束波长的波长调谐区（4,11b）和热补偿区（4）当激光束从波长可调半导体激光器装置振荡时，邻近波长调谐区域（4,11b），用于将大部分输入的电能转换成热量，包括测量每个的电流 - 电压特性。在波长调谐区域和热补偿区域中，公开了根据电流 - 电压特性求出波长调谐区域和热补偿区域中的每一个的电流 - 电力特性。此外，基于电流 - 电压特性和电流 - 电功率特性，确定和控制施加到每个波长调谐区域（4,11b）和热补偿区域（4的电流或电压），如图11c）所示，输入到波长调谐区域的电功率和输入到热补偿区域的电功率之和总是保持恒定。
主权项	A control method for a wavelength tunable semiconductor laser device including an active region for oscillating a laser beam, a wavelength tuning region for shifting a wavelength of the laser beam, and a thermal compensation region adjacent to the wavelength tuning region for converting most of the inputted electric power to heat, when a laser beam is oscillated from the wavelength tunable semiconductor laser device, comprising: measuring an electric current-voltage characteristic of each of the wavelength tuning region and the thermal compensation region; finding an electric current-electric power characteristic of each of the wavelength tuning region and the thermal compensation region from the electric current-voltage characteristics; and on the basis of the electric current-voltage characteristics and the electric current-electric power characteristics, determining and controlling an electric current or voltage applied to each of the wavelength tuning region and the thermal compensation region so that the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.
申请日期	2008-03-07
专利号	EP2242153A1
专利状态	授权
申请号	EP2010167736
公开（公告）号	EP2242153A1
IPC 分类号	H01S5/062 \| H01S5/125
专利代理人	-
代理机构	TBK-PATENT
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/57333
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGRAPH AND TELEPHONE CORPORATION
推荐引用方式 GB/T 7714	FUJIWARA, NAOKI,ISHII, HIROYUKI,OOHASHI, HIROMI,et al. Wavelenght variable semiconductor laser element, apparatus and method for controlling the same. EP2242153A1[P]. 2010-10-20.