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Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array
其他题名Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array
LOU, XIAOHUA; ZHOU, DELAI; DJIE, HERY
2019-08-29
专利权人LUMENTUM OPERATIONS LLC
公开日期2019-08-29
授权国家美国
专利类型发明申请
摘要A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.
其他摘要垂直腔表面发射激光器(VCSEL)阵列可以包括多个VCSEL的第一VCSEL子集,以及多个VCSEL的第二VCSEL子集。当VCSEL阵列被供电时,由VCSEL的第一子集发射的一个或多个第一光束,以及当VCSEL阵列被供电时由第二VCSEL子集发射的一个或多个第二光束可具有不同的能源强度的区域。能量强度区域的不同模式可以包括高能量强度的相应区域和低能量强度的相应区域。
主权项A vertical cavity surface emitting laser (VCSEL) array, comprising: a first subset of VCSELs of a plurality of VCSELs; anda second subset of VCSELs of the plurality of VCSELs,wherein one or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, have different patterns of areas of energy intensity, wherein the different patterns of areas of energy intensity include respective areas of high energy intensity and respective areas of low energy intensity.
申请日期2018-11-28
专利号US20190267778A1
专利状态申请中
申请号US16/202510
公开(公告)号US20190267778A1
IPC 分类号H01S5/42
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/55485
专题半导体激光器专利数据库
作者单位LUMENTUM OPERATIONS LLC
推荐引用方式
GB/T 7714
LOU, XIAOHUA,ZHOU, DELAI,DJIE, HERY. Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array. US20190267778A1[P]. 2019-08-29.
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