Iii-nitride surface-emitting laser and method of fabrication

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	Iii-nitride surface-emitting laser and method of fabrication
其他题名	Iii-nitride surface-emitting laser and method of fabrication
	FORMAN, CHARLES; LEE, SEUNGGEUN; YOUNG, ERIN; KEARNS, JARED; DENBAARS, STEVEN P.; SPECK, JAMES S.; NAKAMURA, SHUJI
	2019-04-11
专利权人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
公开日期	2019-04-11
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7λ or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.
其他摘要	一种垂直腔面发射激光器（VCSEL），包括发光III族氮化物有源区，包括量子阱（QW），其中每个量子阱的厚度大于8nm，腔长度至少为7λ或至少20λ，其中λ是从有源区发射的光的峰值波长，具有减小的表面粗糙度的层，隧道结内腔接触。 VCSEL采用In-Au键合进行倒装芯片键合。这是VCSEL能够连续波操作的第一份报告。
主权项	A device, comprising: a mount; a Vertical Cavity Surface Emitting Laser (VCSEL) on the mount; and a thermally conductive bond between the mount and the VCSEL, the bond comprising a layer of metal having a thermal conductivity such that heat, generated during operation of the VCSEL, is transferred from the VCSEL to the mount and the VCSEL emits continuous wave electromagnetic radiation.
申请日期	2018-10-02
专利号	WO2019070719A1
专利状态	未确认
申请号	PCT/US2018/053982
公开（公告）号	WO2019070719A1
IPC 分类号	H01S5/183 \| H01S5/18
专利代理人	SERAPIGLIA, GERARD B.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/55161
专题	半导体激光器专利数据库
作者单位	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式 GB/T 7714	FORMAN, CHARLES,LEE, SEUNGGEUN,YOUNG, ERIN,et al. Iii-nitride surface-emitting laser and method of fabrication. WO2019070719A1[P]. 2019-04-11.