Etendue enhancement for light emitting diode subpixels

OPT OpenIR > 半导体激光器专利数据库

	Etendue enhancement for light emitting diode subpixels
其他题名	Etendue enhancement for light emitting diode subpixels
	DANESH, FARIBA; LEUNG, BENJAMIN; LAU, TSUN; TEZCAN, ZULAL; TSAI, MIAO-CHAN; BATRES, MAX; CICH, MICHAEL JOSEPH
	2019-03-21
专利权人	GLO AB
公开日期	2019-03-21
授权国家	美国
专利类型	发明申请
摘要	A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.
其他摘要	形成发光器件的方法包括：在掺杂的化合物半导体层上形成包括开口的生长掩模层，通过形成多个有源区形成第一发光二极管（LED）子像素，以及采用选择性外延工艺的第二导电类型半导体材料层，并将每个第一LED子像素转移到背板。为了冗余，可以在第二导电类型半导体材料层上形成阳极接触电极。掺杂的化合物半导体层可以被图案化为具有锥形侧壁以增强光学扩展量。可以在掺杂的化合物半导体材料层上形成光学透明的封装基质以增强光学扩展量。剥离过程可以用于活动区域。使用厚反射器层可以抑制LED的破裂。
主权项	A semiconductor structure, comprising: a doped compound semiconductor layer located over a substrate; a growth mask layer located on a top surface of the doped compound semiconductor layer and including at least one opening therethrough; at least one selectively grown epitaxial semiconductor structure extending through the at least one respective opening through the growth mask layer and having a doping of a first conductivity type; at least one semiconductor layer stack located on a respective selectively grown epitaxial semiconductor structure; and at least one second conductivity type semiconductor material layer having a doping of a second conductivity type located on the at least one semiconductor layer stack.
申请日期	2018-09-06
专利号	US20190088820A1
专利状态	申请中
申请号	US16/123182
公开（公告）号	US20190088820A1
IPC 分类号	H01L33/20 \| H01L33/08 \| H01L33/32 \| H01L33/10 \| H01L33/62 \| H01L25/13 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54919
专题	半导体激光器专利数据库
作者单位	GLO AB
推荐引用方式 GB/T 7714	DANESH, FARIBA,LEUNG, BENJAMIN,LAU, TSUN,et al. Etendue enhancement for light emitting diode subpixels. US20190088820A1[P]. 2019-03-21.