Active Matrix Light Emitting Diode Array and Projector Display Comprising It

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	Active Matrix Light Emitting Diode Array and Projector Display Comprising It
其他题名	Active Matrix Light Emitting Diode Array and Projector Display Comprising It
	SHIEH, CHAN- LONG; YU, GANG
	2015-09-03
专利权人	CBRITE INC.
公开日期	2015-09-03
授权国家	美国
专利类型	发明申请
摘要	A method of fabricating a pixelated projector display includes providing a wafer with a supporting substrate, a first semiconductive layer, an emission layer, and a second semiconductive layer. The wafer is patterned into an array of LEDs/LDs and a planarization layer is deposited over the array. One via for each LED/LD element is formed through the planarization layer. A MOTFT backplane is positioned on the planarization layer, one driver circuit in controlling electrical communication with each via through the planarization layer. A passivation layer is deposited over the MOTFT backplane and heat plugs are extended through the passivation layer, the MOTFT backplane, the planarization layer, and the III-V LED/LD wafer partially through the first semiconductive layer to thermally couple heat from the array of LEDs/LDs to the surface of the passivation layer. An upper end of the heat plugs is accessible for thermal coupling to a heat spreader and/or a heatsink.
其他摘要	制造像素化投影仪显示器的方法包括提供具有支撑衬底，第一半导体层，发射层和第二半导体层的晶片。将晶片图案化成LED / LD阵列，并在阵列上沉积平坦化层。通过平坦化层形成每个LED / LD元件的一个通孔。 MOTFT底板位于平坦化层上，一个驱动电路用于控制与每个通孔通过平坦化层的电连通。在MOTFT背板上沉积钝化层，并且热插塞延伸穿过钝化层，MOTFT背板，平坦化层和III-V LED / LD晶片，部分地穿过第一半导体层，以热耦合来自阵列的热量。 LED / LD到钝化层的表面。热插塞的上端可接近以热耦合到散热器和/或散热器。
主权项	A method of fabricating a pixelated projector display comprising the steps of: providing a III-V LED/LD wafer including a supporting substrate, a first type semiconductive layer on the substrate, and a second or opposite type semiconductive layer overlying the first type semiconductor layer; patterning the III-V LED/LD wafer into an array of LEDs/LDs; depositing a planarization layer over the array of LEDs and forming vias through the planarization layer, one via for each LED/LD in the LED/LD array; forming a MOTFT backplane including an array of MOTFT pixel driver circuits on the planarization layer, one driver circuit in controlling electrical communication with each via through the planarization layer, whereby an AMLED/AMLD display is formed; depositing a passivation layer over the array of MOTFT driver circuits; and extending heat plugs between adjacent LEDs/LDs in the LED/LD array through the passivation layer, the MOTFT backplane, the planarization layer, and the III-V LED/LD wafer partially through the first type semiconductive layer to thermally couple heat from the array of LEDs/LDs to the surface of the passivation layer, an upper end of the heat plugs being accessible for thermally coupling to a heat spreader and/or a heatsink.
申请日期	2015-02-12
专利号	US20150249197A1
专利状态	授权
申请号	US14/620910
公开（公告）号	US20150249197A1
IPC 分类号	H01L33/64 \| H01L33/62 \| H01L33/44 \| H01L33/46 \| H01L27/12 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54564
专题	半导体激光器专利数据库
作者单位	CBRITE INC.
推荐引用方式 GB/T 7714	SHIEH, CHAN- LONG,YU, GANG. Active Matrix Light Emitting Diode Array and Projector Display Comprising It. US20150249197A1[P]. 2015-09-03.