Semiconductor device and method for manufacturing semiconductor device

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	Semiconductor device and method for manufacturing semiconductor device
其他题名	Semiconductor device and method for manufacturing semiconductor device
	TAKAHASHI, HIDEKAZU; YAMADA, DAIKI; MONMA, YOHEI; IGUCHI, TAKAHIRO; ADACHI, HIROKI; YAMAZAKI, SHUNPEI
	2012-01-26
专利权人	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
公开日期	2012-01-26
授权国家	美国
专利类型	发明申请
摘要	A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
其他摘要	半导体器件包括多个半导体集成电路，其结合到结构体，其中纤维体浸渍有机树脂。多个半导体集成电路设置在形成于结构体中的开口处，并且每个包括光电转换元件，具有阶梯侧面的透光衬底，并且其中第一表面侧上的突出部分的宽度小于第一表面侧上的突出部分的宽度。第二表面，半导体集成电路部分，设置在透光衬底的第二表面上，以及彩色透光树脂层，其覆盖透光衬底的第一表面和部分侧表面。多个半导体集成电路包括不同颜色的彩色透光树脂层。
主权项	A method for manufacturing a semiconductor device, comprising: cutting out a first semiconductor integrated circuit including a first chromatic color light-transmitting resin layer and a first photoelectric conversion element from a first light-transmitting substrate; cutting out a second semiconductor integrated circuit including a second chromatic color light-transmitting resin layer and a second photoelectric conversion element from a second light-transmitting substrate; cutting out a third semiconductor integrated circuit including a third chromatic color light-transmitting resin layer and a third photoelectric conversion element from a third light-transmitting substrate; providing the first semiconductor integrated circuit, the second semiconductor integrated circuit, and the third semiconductor integrated circuit into openings in a structure body in which a fibrous body is impregnated with an organic resin; and bonding the first semiconductor integrated circuit, the second semiconductor integrated circuit, and the third semiconductor integrated circuit to the structure body in which the fibrous body is impregnated with the organic resin, wherein the first chromatic color light-transmitting resin layer, the second chromatic color light-transmitting resin layer, and the third chromatic color light-transmitting resin layer include different coloring materials.
申请日期	2011-09-24
专利号	US20120021540A1
专利状态	授权
申请号	US13/244397
公开（公告）号	US20120021540A1
IPC 分类号	H01L21/66 \| H01L31/0203
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54273
专题	半导体激光器专利数据库
作者单位	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
推荐引用方式 GB/T 7714	TAKAHASHI, HIDEKAZU,YAMADA, DAIKI,MONMA, YOHEI,et al. Semiconductor device and method for manufacturing semiconductor device. US20120021540A1[P]. 2012-01-26.