Buffer Layer for GaN-on-Si LED

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	Buffer Layer for GaN-on-Si LED
其他题名	Buffer Layer for GaN-on-Si LED
	CHEN, ZHEN
	2013-03-07
专利权人	KABUSHIKI KAISHA TOSHIBA
公开日期	2013-03-07
授权国家	美国
专利类型	发明申请
摘要	A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.
其他摘要	直接在硅衬底上形成碲化锌（ZnTe）或二氧化钛（TiO2）的缓冲层。可选地，然后形成AlN层作为缓冲层的第二层。然后在缓冲层上形成GaN模板层。在模板层上形成用于GaN基蓝色LED的外延LED结构，从而形成第一多层结构。然后将导电载体粘合到第一多层结构上。然后去除硅衬底和缓冲层，从而形成第二多层结构。在第二多层结构上形成电极，并将该结构单个化以形成蓝色LED器件。
主权项	A method of manufacturing comprising:(a) forming a buffer layer directly on a silicon substrate, wherein the buffer layer comprises zinc and tellurium; and(b) forming an epitaxial LED structure over the buffer layer, wherein the epitaxial LED structure comprises an active layer disposed between a p-type layer and an n-type layer, and wherein the active layer comprises gallium and nitrogen.
申请日期	2011-09-07
专利号	US20130056745A1
专利状态	失效
申请号	US13/227406
公开（公告）号	US20130056745A1
IPC 分类号	H01L33/32 \| H01L33/48
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54263
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	CHEN, ZHEN. Buffer Layer for GaN-on-Si LED. US20130056745A1[P]. 2013-03-07.