N-type gallium-nitride layer having multiple conductive intervening layers

OPT OpenIR > 半导体激光器专利数据库

	N-type gallium-nitride layer having multiple conductive intervening layers
其他题名	N-type gallium-nitride layer having multiple conductive intervening layers
	CHEN, ZHEN; FU, YI
	2013-02-07
专利权人	KABUSHIKI KAISHA TOSHIBA
公开日期	2013-02-07
授权国家	美国
专利类型	发明申请
摘要	A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.
其他摘要	垂直GaN基蓝色LED具有包括多个导电中间层的n型层。 n型层包含多个周期。 n型层的每个周期包括氮化镓（GaN）子层和薄的导电铝 - 氮化镓（AlGaN：Si）插入子层。在一个示例中，每个GaN子层具有基本上大于100nm且小于1000nm的厚度，并且每个AlGaN：Si介入子层具有小于25nm的厚度。整个n型层的厚度至少为2000nm。 AlGaN：Si插入层为GaN子层提供压缩应变，从而防止开裂。在形成LED的外延层之后，将导电载体晶片接合到该结构。然后除去硅衬底。添加电极并将结构单个化以形成成品LED器件。因为AlGaN：Si子层是导电的，所以整个n型层可以保留为成品LED器件的一部分。
主权项	A method of manufacturing a Light Emitting Diode (LED) device, comprising:(a) forming an n-type layer over a silicon substrate, wherein the n-type layer comprises a plurality of periods, wherein each period of the n-type layer includes a gallium-nitride (GaN) sublayer and an aluminum-gallium-nitride doped with silicon (AlGaN:Si) intervening sublayer layer;(b) forming an active layer over the n-type layer, wherein the active layer includes an amount of indium; and(c) forming a p-type layer over the active layer such that the silicon substrate, the n-type layer, the active layer, and the p-type layer form a first structure.
申请日期	2011-08-02
专利号	US20130032836A1
专利状态	授权
申请号	US13/196828
公开（公告）号	US20130032836A1
IPC 分类号	H01L33/32 \| H01L33/58
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54254
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	CHEN, ZHEN,FU, YI. N-type gallium-nitride layer having multiple conductive intervening layers. US20130032836A1[P]. 2013-02-07.