Wavelength converted semiconductor light emitting diode

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	Wavelength converted semiconductor light emitting diode
其他题名	Wavelength converted semiconductor light emitting diode
	SIMONIAN, DMITRI; BASIN, GRIGORIY
	2012-10-03
专利权人	LUMILEDS HOLDING B.V.
公开日期	2012-10-03
授权国家	欧洲专利局
专利类型	发明申请
摘要	A device includes a semiconductor structure (50) comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material (58a, 58b) is positioned in a path of light emitted by the light emitting layer. A thermal coupling material (56) is disposed in a transparent material (60). The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.
其他摘要	一种器件，包括半导体结构（50），所述半导体结构（50）包括设置在n型区域和p型区域之间的发光层。发光材料（58a，58b）位于由发光层发射的光的路径中。热耦合材料（56）设置在透明材料（60）中。热耦合材料的导热率大于透明材料的导热率。定位热耦合材料以散发来自发光材料的热量。
主权项	A device comprising: a semiconductor structure (50) comprising a light emitting layer; a luminescent material (58a, 58b, 58, 66) positioned in a path of light emitted by the light emitting layer; and a thermal coupling material (56) disposed in a transparent material (60); wherein: the thermal coupling material is non-wavelength converting of light emitted by the light emitting layer; the thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material; the thermal coupling material is positioned to dissipate heat from the luminescent material; and an index of refraction of the thermal coupling material differs from an index of refraction of the transparent material by less than 10%.
申请日期	2010-10-22
专利号	EP2504870A1
专利状态	授权
申请号	EP2010779854
公开（公告）号	EP2504870A1
IPC 分类号	H01L33/50 \| H01L33/64 \| H01L33/56
专利代理人	-
代理机构	VAN EEUWIJK, ALEXANDER HENRICUS WALTHERUS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54189
专题	半导体激光器专利数据库
作者单位	LUMILEDS HOLDING B.V.
推荐引用方式 GB/T 7714	SIMONIAN, DMITRI,BASIN, GRIGORIY. Wavelength converted semiconductor light emitting diode. EP2504870A1[P]. 2012-10-03.