Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base

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	Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base
其他题名	Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base
	KURAMOTO, MASAFUMI; OGAWA, SATORU; NIWA, MIKI
	2017-04-05
专利权人	NICHIA CORPORATION
公开日期	2017-04-05
授权国家	欧洲专利局
专利类型	发明申请
摘要	An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver or silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver or silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.
其他摘要	本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。公开了一种制造半导体器件的方法，其中设置在基底（500,600,700）和设置在表面上的氧化银（140,240,340）的表面上的银或氧化银（520,620,720）所述方法包括以下步骤：在基底（500,600,700）上布置半导体元件（100,200,300），使得氧化银（140,240，设置在半导体元件（100,200,300）的表面上的金属氧化物（340,320）与设置在基座（500,600,700）的表面上的银或氧化银（520,620,720）接触，暂时地将半导体元件（100,200,300）和通过对所述半导体元件（100,200,300）或所述基座（500,600,700）施加压力或超声波振动，并且将所述半导体元件（100,200）与所述基座（500,600,700）通过向半导体元件（100,200,300）和基座（500,600,700）施加温度为150〜900℃的热量，使基座（500,600,700）与基座（500,600,700）相连。暂时粘合的步骤和永久粘合的步骤可以同时进行。永久粘合的步骤可以在空气或氧气环境中或在氮气环境中进行。可以在暂时接合的步骤之前，预先将半导体元件（100,200,300）和基底（500,600,700）预先加热至150〜900℃。在暂时粘合的步骤之前可以施加5至50MPa的压力。半导体元件（100,200,300）可以是发光半导体
主权项	A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver oxide provided on a surface of a semiconductor element are bonded, the method comprising the steps of: arranging the semiconductor element on the base such that silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900°C to the semiconductor device and the base.
申请日期	2010-01-20
专利号	EP3151268A2
专利状态	申请中
申请号	EP2016002295
公开（公告）号	EP3151268A2
IPC 分类号	H01L21/58 \| H01L21/60 \| H01L33/40 \| H01L33/48 \| H01L33/62 \| H01S5/022
专利代理人	-
代理机构	GRÜNECKER PATENT- UND RECHTSANWÄLTE PARTG MBB
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54131
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	KURAMOTO, MASAFUMI,OGAWA, SATORU,NIWA, MIKI. Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base. EP3151268A2[P]. 2017-04-05.

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