Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof

OPT OpenIR > 半导体激光器专利数据库

	Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof
其他题名	Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof
	SCHROEDER, MATTHIAS; LORENZEN, DIRK
	2011-06-16
专利权人	JENOPTIK LASER GMBH
公开日期	2011-06-16
授权国家	美国
专利类型	发明申请
摘要	The invention relates, among other things, to a method for the assembly of a semiconductor component, wherein the semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat-conducting body each. For this purpose, the heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element, wherein a spacer, which with regard to the third connection is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the requirement that the joining zone thickness of the third connection is greater than that of the first or the second joining zone, ensures that defined joining zone thicknesses in the bonded connection are maintained during the joining process. The third connection is used for the at least partial heat transfer of the waste heat of the semiconductor component, particularly to a heat sink that is connected to the heat transfer device produced according to the invention.
其他摘要	本发明尤其涉及一种用于组装半导体器件的方法，其中在相互相对的侧面上的半导体器件以第一和第二键合连接的方式与每个导热体连接。为此目的，导热体在其远离半导体元件延伸的部分的区域中以第三键合连接的方式连接，其中，相对于第三连接的间隔物设置在半导体的相对侧上。导热体之间的部件，连同第三连接的连接区厚度大于第一或第二连接区的连接区厚度的要求，确保在连接期间保持连接区中的限定的连接区厚度处理。第三连接用于半导体部件的废热的至少部分热传递，特别是用于连接到根据本发明制造的传热装置的散热器。
主权项	24. A Heat transfer device comprising: a first heat conducting body, including a first heat absorbing section, a first heat entry surface, a first heat transfer section and a first support section; a second heat conducting body, including a second heat absorbing section, a second heat entry surface, a second heat transfer section and a second support section; at least one semiconductor component at least partially disposed between first heat conducting body and the second heat conducting body, the at least one semiconductor component comprising one or both of a laser and a light-emitting diode element, the semiconductor component including a first side, a first contact surface on the first side, a second side opposite the first side, and a second contact surface on the second side, wherein at least a portion of the first contact surface is flat and at least a portion of the second contact surface is flat, wherein the first heat absorbing section and the first heat entry surface are arranged opposite the first contact surface in a direction facing away from the semiconductor component, wherein a first adhesion bond line defining a joining zone is located between the first heat entry surface and the first contact surface, the first joining zone having a thickness oriented perpendicular to the first contact surface and extending from the first contact surface to the first heat entry surface, wherein the first heat transfer section at least partially extends beyond the semiconductor component in a first heat transfer direction parallel to the first contact surface, wherein the second heat absorbing section and the second heat entry surface are arranged opposite the second contact surface in a direction facing away from the semiconductor component, wherein a second adhesion bond line defining a second joining zone is located between the second heat entry surface and the second contact surface, the second joining zone having a thickness oriented perpendicular to the second contact surface and extending from the second contact surface to the second heat entry surface, wherein the second heat transfer section at least partially extends beyond the semiconductor component in a second heat transfer direction parallel to the second contact surface, wherein at least a portion of the second heat transfer section lies opposite at least a portion of the first heat transfer section, wherein the first heat transfer section is thermally connected to the second heat transfer section via a joining gap defining a third joining zone, the third joining zone having a thickness defined between the first contact surface to the second contact surface and oriented perpendicular to the second contact surface, wherein the first support section is adjacent the first heat transfer section and the second support section is adjacent the second heat transfer section, wherein at least a portion of the first support section lies opposite at least a portion of the second support section, the respective portions of the first support section and second support section arranged opposite each other being separated by a spacer, and wherein the thickness of the third joining zone is thicker than the thickness of the first joining zone and the second joining zone.
申请日期	2009-06-02
专利号	US20110142087A1
专利状态	授权
申请号	US12/995999
公开（公告）号	US20110142087A1
IPC 分类号	H01S3/042 \| H01L33/64 \| H01J9/227
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54086
专题	半导体激光器专利数据库
作者单位	JENOPTIK LASER GMBH
推荐引用方式 GB/T 7714	SCHROEDER, MATTHIAS,LORENZEN, DIRK. Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof. US20110142087A1[P]. 2011-06-16.