Electrically pumped semiconductor evanescent laser

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	Electrically pumped semiconductor evanescent laser
其他题名	Electrically pumped semiconductor evanescent laser
	BOWERS, JOHN E.; COHEN, ODED; FANG, ALEXANDER W.; JONES, RICHARD; PANICCIA, MARIO J.; PARK, HYUNDAI
	2008-12-31
专利权人	INTEL CORPORATION
公开日期	2008-12-31
授权国家	世界知识产权组织
专利类型	发明申请
摘要	An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
其他摘要	一种电泵浦混合瞬逝激光器的装置和方法。例如，一种装置包括设置在硅中的光波导。有源半导体材料设置在光波导上，限定光波导和有源半导体材料之间的渐逝耦合界面，使得由光波导引导的光学模式与光波导和有源半导体材料重叠。通过有源半导体材料限定电流注入路径并且至少部分地与光学模式重叠，使得响应于沿着电流注入路径的电流注入而响应于有源半导体材料的电泵浦而产生光，至少部分地与光学器件重叠。模式。
主权项	An apparatus, comprising: an optical waveguide disposed in silicon; an active semiconductor material disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material; and a current injection path defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
申请日期	2007-06-25
专利号	WO2008097330A3
专利状态	未确认
申请号	PCT/US2007/072055
公开（公告）号	WO2008097330A3
IPC 分类号	G02B6/26 \| H01S5/042 \| H01S5/42
专利代理人	VINCENT, LESTER J.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/53941
专题	半导体激光器专利数据库
作者单位	INTEL CORPORATION
推荐引用方式 GB/T 7714	BOWERS, JOHN E.,COHEN, ODED,FANG, ALEXANDER W.,et al. Electrically pumped semiconductor evanescent laser. WO2008097330A3[P]. 2008-12-31.

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