Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member

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	Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member
其他题名	Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member
	KATO, HANAKO; MORI, YUTAKA; KOBAYASHI, HIROSHI; TOMURA, TSUBASA; YAMAZAKI, MASANORI; ABE, MARI
	2009-02-19
专利权人	MITSUBISHI CHEMICAL CORPORATION
公开日期	2009-02-19
授权国家	美国
专利类型	发明申请
摘要	To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 45 or larger.
其他摘要	为了提供透明性，耐光性和耐热性优异的新型半导体发光器件构件，并且即使在长时间使用后也能够密封半导体发光器件并保持荧光体而不产生裂缝或剥落，该构件满足以下要求：（1）包含在陶瓷或金属表面上与金属氧烷键中的羟基或氧形成氢键的官能团，（2）在200℃下放置500和500之后的500nm波长的透射率维持率500小时在80％至110％之间，（3）在用波长为380nm至500nm的光照射后，目测检查没有观察到变化，其中心波长在400nm和450nm之间，包括4500W，24小时/ 434nm波长的/ m2照度，（4）550nm波长的折射率为45以上。
主权项	A semiconductor light-emitting device member, wherein(1) the semiconductor light-emitting device member comprises a functional group capable of forming a hydrogen bond with a hydroxyl group or an oxygen in a metalloxane bond,(2) the maintenance rate of transmittance with respect to the light having a wavelength of 400 nm before and after being left at temperature of 200° C. for 500 hours is 80% or more and 110% or less,(3) no change is observed by visual inspection after being irradiated with light having a wavelength range of longer than 385 nm and 500 nm or less, whose center wavelength is located at between 400 nm and 450 nm both inclusive, for 24 hours with illumination intensity of 4500 W/m with respect to the wavelength of 436 nm, and(4) the refractive index with respect to the light having 550 nm wavelength is 45 or larger.
申请日期	2006-09-22
专利号	US20090045422A1
专利状态	授权
申请号	US12/067859
公开（公告）号	US20090045422A1
IPC 分类号	H01L33/00 \| H01L33/56
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/53848
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CHEMICAL CORPORATION
推荐引用方式 GB/T 7714	KATO, HANAKO,MORI, YUTAKA,KOBAYASHI, HIROSHI,et al. Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member. US20090045422A1[P]. 2009-02-19.