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Laterally-integrated waveguide photodetector apparatus and related coupling methods
其他题名Laterally-integrated waveguide photodetector apparatus and related coupling methods
AHN, DONGHWAN; LIU, JIFENG; MICHEL, JURGEN; KIMERLING, LIONEL C.
2007-05-10
专利权人MASSACHUSETTS INSTITUTE OF TECHNOLOGY
公开日期2007-05-10
授权国家美国
专利类型发明申请
摘要High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
其他摘要利用通常与CMOS处理技术兼容的方法制造具有与光电探测器密集集成并有效耦合到光电探测器的波导的高速光电器件。在各种实施方式中,波导基本上由单晶硅组成,并且光电探测器包含或基本上由外延生长的锗或具有超过约90%的锗浓度的硅 - 锗合金组成。
主权项An integrated photodetector apparatus comprising (a) a substrate comprising a first cladding layer disposed over a base layer, the base layer comprising a first semiconductor material, the first cladding layer defining an opening extending to the base layer; (b) an optical waveguide comprising the first semiconductor material and disposed over the substrate; and (c) a photodetector comprising a second semiconductor material epitaxially grown over the base layer at least in the opening, the photodetector comprising an intrinsic region optically coupled to the waveguide, at least a portion of the intrinsic region extending above the first cladding layer and laterally aligned with the waveguide.
申请日期2005-11-08
专利号US20070104441A1
专利状态失效
申请号US11/269907
公开(公告)号US20070104441A1
IPC 分类号G02B6/10 | G02B6/26 | G02B6/42
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/53744
专题半导体激光器专利数据库
作者单位MASSACHUSETTS INSTITUTE OF TECHNOLOGY
推荐引用方式
GB/T 7714
AHN, DONGHWAN,LIU, JIFENG,MICHEL, JURGEN,et al. Laterally-integrated waveguide photodetector apparatus and related coupling methods. US20070104441A1[P]. 2007-05-10.
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