Xi'an Institute of Optics and Precision Mechanics,CAS
Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate | |
其他题名 | Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate |
LIU, ANSHENG; PANICCIA, MARIO J.; NICOLAESCU, REMUS; JONES, RICHARD | |
2002-12-26 | |
专利权人 | INTEL CORPORATION |
公开日期 | 2002-12-26 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity. |
其他摘要 | 一种基于半导体的激光调谐方法和装置。在本发明的一个方面,根据本发明实施例的装置包括设置在半导体衬底中的增益介质。激光腔设置在半导体衬底中并且光学耦合到增益介质。第一反射器限定激光腔的一端。第一反射器包括设置在半导体衬底中的第一可调布拉格光栅。第一可调布拉格光栅包括沿半导体衬底的第一多个硅和多晶硅界面,使得沿布拉格光栅存在第一多个折射率的扰动。第一可调布拉格光栅选择性地反射具有可调中心波长的光,以通过在激光腔中具有可调中心波长的受激发射来发光。第二反射器限定激光腔的另一端。 |
主权项 | An apparatus, comprising: a gain medium disposed in a semiconductor substrate; a laser cavity disposed in the semiconductor substrate, the laser cavity optically coupled to the gain medium; a first reflector defining one end of the laser cavity, the first reflector including a first tunable Bragg grating disposed in the semiconductor substrate, the first tunable Bragg grating including a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the first tunable Bragg grating, the first tunable Bragg grating to selectively reflect light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity; and a second reflector defining an other end of the laser cavity. |
申请日期 | 2001-09-28 |
专利号 | US20020197013A1 |
专利状态 | 授权 |
申请号 | US09/967445 |
公开(公告)号 | US20020197013A1 |
IPC 分类号 | G02B6/12 | G02B6/124 | G02F1/01 | G02F1/025 | G02B6/34 | G02B6/26 | H01S3/08 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/52551 |
专题 | 半导体激光器专利数据库 |
作者单位 | INTEL CORPORATION |
推荐引用方式 GB/T 7714 | LIU, ANSHENG,PANICCIA, MARIO J.,NICOLAESCU, REMUS,et al. Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate. US20020197013A1[P]. 2002-12-26. |
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