Tapered semiconductor waveguides and method of making same

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	Tapered semiconductor waveguides and method of making same
其他题名	Tapered semiconductor waveguides and method of making same
	KOCH, THOMAS L.; KOREN, UZIEL
	1991-02-06
专利权人	AT&T CORP.
公开日期	1991-02-06
授权国家	欧洲专利局
专利类型	发明申请
摘要	Adiabatic mode control and structural reproducibility are achieved by a tapered semiconductor waveguide structure wherein semiconductor guiding layers are interleaved with stop-etch layers and each guiding layer extends further along the propagation axis of the waveguide further than the guiding layer immediately adjacent thereabove to create a staircase-like core or guiding structure. Cladding regions of appropriate semiconductor material having a lower index of refraction than the tapered core structure may be added to completely surround the tapered guiding structure. The profile of the tapered structure is realizable as any desired staircase-like shape such as linear, parabolic, exponential or the like. Additional layers of higher index of refraction semiconductor material may be included in the cladding region to permit additional beam shaping of the expanded spatial mode propagating along the tapered waveguide. Photolithographic masks defining successively larger exposed areas are aligned, deposited over the waveguide structure, and then removed following each etching step. Material selective etching techniques are employed to remove exposed (unmasked) portions of guiding layers. In sequence, the exposed, formerly underlying portions of the stop-etch layers are then removed using material selective etching. Iteration of the above process steps permits a tapered waveguide structure to be defined.
其他摘要	通过锥形半导体波导结构实现绝热模式控制和结构再现性，其中半导体引导层与停止蚀刻层交错，并且每个引导层沿着波导的传播轴进一步延伸，而不是紧邻其上方的引导层，以形成楼梯类似核心或指导结构。可以添加具有比锥形芯结构低的折射率的适当半导体材料的包覆区域以完全包围锥形引导结构。锥形结构的轮廓可以实现为任何所需的阶梯状形状，例如线性，抛物线，指数等。在包层区域中可以包括附加的较高折射率半导体材料层，以允许沿锥形波导传播的扩展空间模式的附加光束整形。将依次限定较大曝光区域的光刻掩模对准，沉积在波导结构上，然后在每个蚀刻步骤之后移除。采用材料选择性蚀刻技术来去除引导层的暴露（未掩蔽）部分。然后，依次使用材料选择性蚀刻去除停止蚀刻层的暴露的，先前下面的部分。上述工艺步骤的迭代允许限定锥形波导结构。
主权项	A method for etching a multilayer semiconductor heterostructure body to form a waveguide device, said multilayer semiconductor heterostructure body including guiding layers and stop-etch layers interleaved with each other, the method comprising the steps of: contacting a surface of a predetermined exposed guiding layer portion with a first material selective chemical etchant for a time period sufficient to expose a corresponding predetermined stop-etch layer portion; contacting a surface of a predetermined exposed stop-etch layer portion with a second material selective chemical etchant for a time period sufficient to expose a corresponding predetermined guiding layer portion; iterating in sequence the first contacting step followed by the second contacting step wherein the predetermined exposed layer portions during a given iteration are longer than and include at least the predetermined exposed layer portions for previous iterations so that a staircase-like tapered waveguide profile is formed.
申请日期	1990-07-25
专利号	EP0411816A2
专利状态	失效
申请号	EP1990308134
公开（公告）号	EP0411816A2
IPC 分类号	G02B6/122 \| G02B6/13 \| G02B6/136 \| G02B6/30 \| H01L21/306 \| H01S5/10 \| G02B6/12
专利代理人	-
代理机构	WATTS, CHRISTOPHER MALCOLM KELWAY, DR.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51895
专题	半导体激光器专利数据库
作者单位	AT&T CORP.
推荐引用方式 GB/T 7714	KOCH, THOMAS L.,KOREN, UZIEL. Tapered semiconductor waveguides and method of making same. EP0411816A2[P]. 1991-02-06.

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