Semiconductor laser apparatus and method of manufacturing the same

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	Semiconductor laser apparatus and method of manufacturing the same
其他题名	Semiconductor laser apparatus and method of manufacturing the same
	BESSHO, YASUYUKI; HATA, MASAYUKI; INOUE, DAIJIRO
	2009-04-16
专利权人	SANYO ELECTRIC CO., LTD.
公开日期	2009-04-16
授权国家	美国
专利类型	发明申请
摘要	Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.
其他摘要	第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。第二p侧焊盘电极和第三p侧焊盘电极彼此分开形成。焊料膜分别形成在第二和第三p侧焊盘电极的上表面上。红色半导体激光器件的第四p侧焊盘电极接合到第二p侧焊盘电极上，相应的焊料膜夹在它们之间。红外半导体激光器件的第五p侧焊盘电极接合到第三p侧焊盘电极上，相应的焊料膜夹在它们之间。第二和第三p侧焊盘电极彼此分开形成，使得第四和第五p侧焊盘电极彼此电隔离。
主权项	49. A semiconductor laser apparatus comprising: a first semiconductor laser device having a first semiconductor layer emitting a light beam of a first wavelength on a first substrate; and a second semiconductor laser device having a second semiconductor layer emitting a light beam of a second wavelength on a second substrate, wherein said first and second wavelengths are different from each other, and said second substrate is composed of a material different from that of said first substrate, said first semiconductor laser device has a first electrode on a first surface thereof, said second semiconductor laser device has a first electrode on a first surface thereof, said first electrode of said first semiconductor laser device is formed on a surface of said first semiconductor layer; said first electrode of said second semiconductor laser device is bonded to said first surface of said first semiconductor laser device with an insulating film sandwiched therebetween, and said first electrode of said first semiconductor laser device and said first electrode of said second semiconductor laser device are electrically isolated from each other.
申请日期	2008-12-12
专利号	US20090097523A1
专利状态	失效
申请号	US12/333764
公开（公告）号	US20090097523A1
IPC 分类号	H01S5/00 \| H01L21/00 \| H01S5/026 \| H01S5/22 \| H01S5/40
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51667
专题	半导体激光器专利数据库
作者单位	SANYO ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	BESSHO, YASUYUKI,HATA, MASAYUKI,INOUE, DAIJIRO. Semiconductor laser apparatus and method of manufacturing the same. US20090097523A1[P]. 2009-04-16.