Vertical-stacked coupled quantum-dot vertical cavity surface emitting laser

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	Vertical-stacked coupled quantum-dot vertical cavity surface emitting laser
其他题名	Vertical-stacked coupled quantum-dot vertical cavity surface emitting laser
	LIN, KUO-JUI; WANG, JYH-SHYANG; HSIAO, JU-SHIUNG; LIANG, CHIU-YUEH
	2007-10-11
专利权人	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
公开日期	2007-10-11
授权国家	美国
专利类型	发明申请
摘要	A vertical-stacked coupled quantum-dot vertical cavity surface emitting laser includes a semiconductor substrate, a lower distributed Bragg reflector, a first wave guide layer, an emitting layer, a second wave guide layer and an upper distributed Bragg reflector. The emitting layer is formed by multiple Quantum-Dot Vertically Stacked layers, which are spaced less than 20 nm.
其他摘要	垂直堆叠耦合的量子点垂直腔表面发射激光器包括半导体衬底，下分布式布拉格反射器，第一波导层，发射层，第二波导层和上分布布拉格反射器。发光层由多个量子点垂直堆叠层形成，其间隔小于20nm。
主权项	A vertical-stacked coupled quantum-dot laser, comprising: an semiconductor substrate; a lower distributed Bragg reflector layer formed on the semiconductor substrate; a first optical wave guide layer formed on the lower distributed Bragg reflector layer; an emitting layer, which is formed on the first optical wave guide layer, formed by a plurality of vertical-stacked quantum dots with space layers less than 20 nm; a second optical wave guide layer formed on the emitting layer; and a upper distributed Bragg reflector layer formed on the second optical wave guide layer.
申请日期	2005-09-19
专利号	US20070237198A1
专利状态	失效
申请号	US11/228380
公开（公告）号	US20070237198A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51506
专题	半导体激光器专利数据库
作者单位	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	LIN, KUO-JUI,WANG, JYH-SHYANG,HSIAO, JU-SHIUNG,et al. Vertical-stacked coupled quantum-dot vertical cavity surface emitting laser. US20070237198A1[P]. 2007-10-11.