Xi'an Institute of Optics and Precision Mechanics,CAS
| Periodic current blocking structure | |
| 其他题名 | Periodic current blocking structure |
| PEH, WEI, TAN; RAYMOND, ADHI, PANGESTU, SELOMULYA; YUEN, CHUEN, CHAN; LAY, CHENG, CHOO; YEE, LOY, LAM | |
| 2005-02-23 | |
| 专利权人 | DENSELIGHT SEMICONDUCTORS PTE LTD |
| 公开日期 | 2005-02-23 |
| 授权国家 | 英国 |
| 专利类型 | 发明申请 |
| 摘要 | A gain and index complex coupled DFB laser comprises a periodic arrangement of high band gap semiconductor material 33 surrounded low band gap semiconductor material 32 which provides a periodic current blocking structure. |
| 其他摘要 | 增益和折射率复合耦合DFB激光器包括围绕低带隙半导体材料32的高带隙半导体材料33的周期性排列，其提供周期性电流阻挡结构。 |
| 主权项 | A photonic device having a current blocking structure, the blocking structure comprising one or more regions of a first semiconductor material at least partially surrounded by a second semiconductor material, the first semiconductor material having a higher band-gap energy than the second semiconductor material so that, in use, a flow of electric current injected into the photonic device is impeded at an interface between the first and second materials in dependence on the difference in band-gap energy. |
| 申请日期 | 2003-08-18 |
| 专利号 | GB2405258A |
| 专利状态 | 失效 |
| 申请号 | GB2003019351 |
| 公开（公告）号 | GB2405258A |
| IPC 分类号 | H01S5/32 | H01S5/00 | H01S5/20 | H01S5/12 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/51384 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DENSELIGHT SEMICONDUCTORS PTE LTD |
| 推荐引用方式 GB/T 7714 | PEH, WEI, TAN,RAYMOND, ADHI, PANGESTU, SELOMULYA,YUEN, CHUEN, CHAN,et al. Periodic current blocking structure. GB2405258A[P]. 2005-02-23. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| GB2405258A.PDF（670KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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