High power single mode semiconductor laser

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	High power single mode semiconductor laser
其他题名	High power single mode semiconductor laser
	GARBUZOV DIMITRI Z.; KHALFIN VIKTOR B.
	2001-08-09
专利权人	TRUMPF PHOTONICS, INC.
公开日期	2001-08-09
授权国家	加拿大
专利类型	发明申请
摘要	A single-mode semiconductor diode laser includes a single-mode section (201), a tapered mode-transformer section (202) coupled to the single-mode section (201), and a power-supply section (203) coupled to the tapered mode transformer section (202). The power-supply section (203) has a width larger than the width of the single-mode section (201). The tapered mode-transformer section (202) is characterized in that optical energy from said single-mode section (201) adiabatically couples to the power-supply section (203) through the mode-transformer section (202).
其他摘要	单模半导体二极管激光器包括单模部分（201），耦合到单模部分（201）的锥形模式 - 变压器部分（202），以及耦合到锥形部分的电源部分（203）模式变压器部分（202）。电源部分（203）的宽度大于单模部分（201）的宽度。锥形模式 - 变压器部分（202）的特征在于来自所述单模部分（201）的光能通过模式 - 变压器部分（202）绝热地耦合到电源部分（203）。
主权项	A single-mode semiconductor diode laser, comprising: (a) a single-mode section with a first width S0; (b) a tapered mode-transformer section coupled to said single-mode section; and (c) a power-supply section coupled to said tapered mode transformer section, said power supply section having a second width larger than the first width, and said tapered mode transformer section having a taper angle and a length selected such that energy from said single-mode section adiabatically couples to said power- supply section through said mode-transformer section.
申请日期	2001-01-19
专利号	CA2398827A1
专利状态	失效
申请号	CA2398827
公开（公告）号	CA2398827A1
IPC 分类号	H01S5/00 \| H01S5/10 \| H01S5/20
专利代理人	NORTON ROSE OR S.E.N.C.R.L. S.R.L./LLP
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51298
专题	半导体激光器专利数据库
作者单位	TRUMPF PHOTONICS, INC.
推荐引用方式 GB/T 7714	GARBUZOV DIMITRI Z.,KHALFIN VIKTOR B.. High power single mode semiconductor laser. CA2398827A1[P]. 2001-08-09.