Laser elements having different wavelengths formed from one semiconductor substrate

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	Laser elements having different wavelengths formed from one semiconductor substrate
其他题名	Laser elements having different wavelengths formed from one semiconductor substrate
	SAKATA, YASUTAKA
	2001-06-28
专利权人	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
公开日期	2001-06-28
授权国家	美国
专利类型	发明申请
摘要	A set of semiconductor laser elements and manufacturing method. The set of semiconductor laser elements have mutually different oscillation wavelengths, and perform single longitudinal mode oscillation by having periodically varying refractive index within the elements. The set of semiconductor laser elements are formed together from one semiconductor substrate. Duty cycle of a diffraction grating in each element differs from each other corresponding to the oscillation wavelength to realize equal coupling coefficient. Alternatively; a product of coupling coefficient and the length of area in which the diffraction grating is formed or a product of coupling coefficient and the length of the element is made substantially constant.
其他摘要	一组半导体激光元件及制造方法。该组半导体激光器元件具有相互不同的振荡波长，并通过在元件内具有周期性变化的折射率来执行单纵模振荡。该组半导体激光器元件由一个半导体衬底一起形成。每个元件中的衍射光栅的占空比对应于振荡波长彼此不同，以实现相等的耦合系数。另外;耦合系数和形成衍射光栅的区域长度或耦合系数与元件长度的乘积的乘积基本上是恒定的。
主权项	A set of semiconductor laser elements which perform single longitudinal mode oscillation by having periodically varying refractive index within said elements and which are formed together from one semiconductor substrate, said semiconductor laser elements having mutually different oscillation wavelengths, characterized in that each of said semiconductor laser elements comprises a diffraction grating, and a duty cycle of said diffraction grating varies so as to realize equal coupling coefficient.
申请日期	2000-12-19
专利号	US20010005391A1
专利状态	失效
申请号	US09/741303
公开（公告）号	US20010005391A1
IPC 分类号	H01S5/02 \| H01S5/026 \| H01S5/10 \| H01S5/12 \| H01S5/20 \| H01S5/40 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51293
专题	半导体激光器专利数据库
作者单位	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
推荐引用方式 GB/T 7714	SAKATA, YASUTAKA. Laser elements having different wavelengths formed from one semiconductor substrate. US20010005391A1[P]. 2001-06-28.