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Reliability tester of semiconductor lasers
其他题名Reliability tester of semiconductor lasers
FUJIMARA, YASUSHI, C/O OSAKA WORKS OF SUMITOMO; YOSHIMURA, MANABU, C/O OSAKA WORKS OF SUMITOMO; TERAUCHI, HITOSHI, C/O OSAKA WORKS OF SUMITOMO
1994-12-14
专利权人SUMITOMO ELECTRIC INDUSTRIES, LTD.
公开日期1994-12-14
授权国家欧洲专利局
专利类型发明申请
摘要Conventionally Ge photodiodes have been employed as photodetectors for the reliability test of the semiconductor lasers of a 0 µm and 6 µm wavelength, since Ge photodiodes have wide receiving regions with high sensitivity for the range of wavelength. A large dark current flows in a Ge photodiode at a high temperature. Thus, Ge photodiodes must be cooled. Also the sample lasers are heated to accelerate the test. The lasers and the Ge photodiodes require two independent thermostats, and fiber rods are used to connect the Ge photodiodes to the lasers. The present invention uses InGaAs photodiodes (21) as photodetectors. The InGaAs photodiodes (21) and sample lasers (11) can be placed face to face in the same thermostat (1). Several pairs of a laser and a InGaAs photodiode can be aligned in the axial direction in the thermostat. A saving in the packing space per sample increases the number of lasers which can be examined in a test cycle.
其他摘要常规地,Ge光电二极管已被用作光电探测器,用于0μm和6μm波长的半导体激光器的可靠性测试,因为Ge光电二极管具有对波长范围具有高灵敏度的宽接收区域。大的暗电流在高温下在Ge光电二极管中流动。因此,必须冷却Ge光电二极管。还加热样品激光器以加速测试。激光器和Ge光电二极管需要两个独立的恒温器,光纤棒用于将Ge光电二极管连接到激光器。本发明使用InGaAs光电二极管(21)作为光电探测器。 InGaAs光电二极管(21)和样品激光器(11)可以面对面放置在同一恒温器(1)中。几对激光器和InGaAs光电二极管可以在恒温器中沿轴向排列。每个样品的包装空间的节省增加了可以在测试循环中检查的激光器的数量。
主权项A reliability tester of semiconductor lasers which emit light beams, comprising InGaAs photodiodes for receiving the light emitted from the lasers at receiving area and for producing photocurrents, a thermostat for storing both the photodiodes and the semiconductor lasers to be examined in facing relationship, a temperature controlling unit for controlling the temperature of the thermostat, a driver device for supplying driving currents to the laser and monitor device for detecting photocurrents of the InGaAs photodiodes.
申请日期1994-03-31
专利号EP0628830A2
专利状态失效
申请号EP1994302365
公开(公告)号EP0628830A2
IPC 分类号G01J1/00 | G01M11/00 | G01R31/26 | H01S5/00
专利代理人-
代理机构SMITH, NORMAN IAN
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/50885
专题半导体激光器专利数据库
作者单位SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式
GB/T 7714
FUJIMARA, YASUSHI, C/O OSAKA WORKS OF SUMITOMO,YOSHIMURA, MANABU, C/O OSAKA WORKS OF SUMITOMO,TERAUCHI, HITOSHI, C/O OSAKA WORKS OF SUMITOMO. Reliability tester of semiconductor lasers. EP0628830A2[P]. 1994-12-14.
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