Vapor growth device

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	Vapor growth device
其他题名	Vapor growth device
	KASAI SHUSUKE; YAMAMOTO OSAMU; KONDO MASAKI; SASAKI KAZUAKI; MATSUMOTO AKIHIRO
	1991-12-16
专利权人	シャープ株式会社
公开日期	1991-12-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make it possible to perform the cleavage of a semiconductor crystal easily and without marring a substrate by a method wherein a vapor growth device is provided with a means, which applies an ultrasonic vibration to the substrate formed with at least one layer consisting of the semiconductor crystal and performs the cleavage of the semiconductor crystal. CONSTITUTION:A substrate 11 with protrusion parts 21 formed therein is fixed on a susceptor 35, is introduced in the interior of a substrate treatment chamber 30 and is placed on an ultrasonic vibration applying stage 37. A sample introducing port 33 is closed, a gate valve 32 is opened, the interiors of the chamber 30 and a reactor 31 are exhausted and when an ultrasonic vibration is applied to the substrate 11 from the stage 37 via the susceptor 35, the protrusion parts 21 in the substrate 11 are immediately cleaved at the parts of coupling parts 22 to form a resonator and a cleavage surface 23 becomes a resonator end surface. Then, the susceptor 35 is moved over a receiving pan 38, a support bar 36 is rotated and the remaining protrusion parts 21 are made to fall in the pan 38 and are removed. Moreover, a tilted forbidden band width layer, an end surface reflection film and the like can be formed on the cleavage surface within the same device subsequently to the removal of the protrusion parts.
其他摘要	目的：为了能够容易地进行半导体晶体的切割而不损坏基板，其中通过一种方法，其中为气相生长装置提供一种装置，该装置将超声波振动施加到由至少一个由至少一个层构成的基板上。半导体晶体并执行半导体晶体的解理。组成：其中形成有突出部分21的基板11固定在基座35上，被引入基板处理室30的内部并放置在超声振动施加台37上。样品引入口33关闭，门阀32打开，腔室30和反应器31的内部被排出，当超声波振动从台37经由基座35施加到基板11时，基板11中的突出部分21立即被切割。耦合部分22的形成谐振器和解理表面23的部分成为谐振器端面。然后，基座35在接收盘38上移动，支撑杆36旋转，并且使剩余的突出部分21落入盘38中并被移除。此外，在去除突出部分之后，可以在同一装置内的解理表面上形成倾斜的禁带宽度层，端面反射膜等。
主权项	-
申请日期	1990-04-02
专利号	JP1991285327A
专利状态	失效
申请号	JP1990087715
公开（公告）号	JP1991285327A
IPC 分类号	H01L21/205 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/50608
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	KASAI SHUSUKE,YAMAMOTO OSAMU,KONDO MASAKI,et al. Vapor growth device. JP1991285327A[P]. 1991-12-16.

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