Electronic type cooling element built-in semiconductor laser assembly

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	Electronic type cooling element built-in semiconductor laser assembly
其他题名	Electronic type cooling element built-in semiconductor laser assembly
	GOTO MASAMI
	1991-09-03
专利权人	FUJITSU LTD
公开日期	1991-09-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To keep a semiconductor laser assembly stable in temperature and high in operation speed by a method wherein not only electrical wire connections are lessened in inductance but also an electronic type cooling element is apparently decreased in parasitic electrostatic capacity. CONSTITUTION:In a semiconductor laser assembly, an LD chip 26 is connected to assembly terminals 28 and 30 with wires 32 and 34 shortened in length. A capacitor 36 smaller than an equivalent electrostatic capacitor Co in capacity is added in series to the capacitor Co, whereby the resultant capacity becomes smaller than that of the capacitor 36, and a resonant frequency induced by the resultant electrostatic capacitor of the equivalent electrostatic capacitor Co and the capacitor 36 and the inductance of the wire 34 can be increased higher than a modulation frequency band. In result, an optical output can be prevented from being distorted in waveform, and a light source can be stabilized in temperature.
其他摘要	目的：通过一种方法来保持半导体激光器组件在温度上稳定和高的操作速度，其中不仅电线连接减少电感，而且电子型冷却元件显然降低寄生静电容量。构成：在半导体激光器组件中，LD芯片26通过长度缩短的导线32和34连接到组件端子28和30。比电容器中的等效静电电容器Co小的电容器36串联地添加到电容器Co，由此所得到的电容变得小于电容器36的电容，并且由等效静电电容器Co的所得静电电容器感应的谐振频率并且电容器36和线34的电感可以增加得高于调制频带。结果，可以防止光输出波形失真，并且可以使光源的温度稳定。
主权项	-
申请日期	1989-12-28
专利号	JP1991201494A
专利状态	失效
申请号	JP1989338427
公开（公告）号	JP1991201494A
IPC 分类号	H04B10/25 \| H01S5/00 \| H04B10/2507 \| H01S3/18 \| H04B10/12
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/50589
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	GOTO MASAMI. Electronic type cooling element built-in semiconductor laser assembly. JP1991201494A[P]. 1991-09-03.

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