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半導體雷射裝置及其製法
Alternative Title半導體雷射裝置及其製法
田中明; 伊藤義行; 堀內理; 幕田章雄; 玄永康一; 鹽澤秀夫
2005-07-21
Rights Holder東芝股份有限公司
Date Available2005-07-21
Country中国台湾
Subtype授权发明
Abstract一種半導體雷射裝置包含:一第一導電率型之包覆層;一設在包覆層上之主動層;及一設在主動層上一第二導電率層之包覆層。第二導電率型之包覆層之至少一部分具一脊狀條。脊狀條包含:一側壁實質上為垂直之上部分;且一下部位之側壁為傾斜,故條片朝主動層變寬。
Other Abstract一種半導體雷射裝置包含:一第一導電率型之包覆層;一設在包覆層上之主動層;及一設在主動層上一第二導電率層之包覆層。第二導電率型之包覆層之至少一部分具一脊狀條。脊狀條包含:一側壁實質上為垂直之上部分;且一下部位之側壁為傾斜,故條片朝主動層變寬。
Application Date2004-05-14
Patent NumberTWI236790B
Status失效
Application NumberTW093113784
Open (Notice) NumberTWI236790B
IPC Classification NumberH01S5/22 | H01S5/343 | G11B7/125 | H01S5/00 | H01S5/02 | H01S5/042 | H01S5/06 | H01S5/065 | H01S5/20 | H01S5/223 | H01S5/227 | H01S5/40 | H01S3/18
Patent Agent林志剛
Agency-
Document Type专利
Identifierhttp://ir.opt.ac.cn/handle/181661/48110
Collection半导体激光器专利数据库
Affiliation東芝股份有限公司
Recommended Citation
GB/T 7714
田中明,伊藤義行,堀內理,等. 半導體雷射裝置及其製法. TWI236790B[P]. 2005-07-21.
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