Mono-frequency semiconductor variable-wavelength laser

OPT OpenIR > 半导体激光器专利数据库

	Mono-frequency semiconductor variable-wavelength laser
其他题名	Mono-frequency semiconductor variable-wavelength laser
	GAGIK SHMAVONYAN
	2008-12-01
专利权人	GAGIK SHMAVONYAN
公开日期	2008-12-01
授权国家	亚美尼亚
专利类型	授权发明
摘要	The invention relates to solid-state physics, specifically semiconductor laser engineering. The device contains a diffraction screen, collimator, lens, and external resonator. An active-layer semiconductor optical amplifier is located between the collimator and lens of the resonator. The broadband dual-channel amplifier contains an angled and arched waveguide. Its active layer has a multilayer quantum heterostructure with seven separated atypical quantum wells and barriers. The invention has resulted in the creation of a laser adjustable in the ultra-wideband spectral range, 3 figures.
其他摘要	本发明涉及固态物理，特别是半导体激光工程。该装置包含衍射屏，准直器，透镜和外部谐振器。有源层半导体光放大器位于谐振器的准直器和透镜之间。宽带双通道放大器包含成角度和拱形波导。其有源层具有多层量子异质结构，具有七个分离的非典型量子阱和势垒。本发明产生了可在超宽带光谱范围内调节的激光器，3个数字。
申请日期	2008-11-12
专利号	AM2265A
专利状态	未确认
申请号	AM20080200
公开（公告）号	AM2265A
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47863
专题	半导体激光器专利数据库
作者单位	GAGIK SHMAVONYAN
推荐引用方式 GB/T 7714	GAGIK SHMAVONYAN. Mono-frequency semiconductor variable-wavelength laser. AM2265A[P]. 2008-12-01.