Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor optical filter and an optical communication system using the same | |
其他题名 | Semiconductor optical filter and an optical communication system using the same |
ONO, TAKEO; NITTA, JUN | |
1995-08-08 | |
专利权人 | CANON KABUSHIKI KAISHA |
公开日期 | 1995-08-08 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor optical filter that includes a semiconductor substrate and a laser structure formed on the substrate. The laser structure includes an active layer of a quantum well structure and a grating formed along the active layer. The active layer is constructed to have a ground state level and an energy level other than the ground state level. A saturation gain of the ground state level is set to a value less than an internal loss, and the other energy level is set to permit an increase in the amount of carriers injected into the laser structure. The laser structure is typically a distributed feedback type laser structure. Anti-reflection coatings may be formed on the end surfaces of the laser structure. |
其他摘要 | 一种半导体滤光器,包括半导体衬底和形成在衬底上的激光器结构。激光器结构包括量子阱结构的有源层和沿有源层形成的光栅。有源层构造成具有基态电平和除基态电平之外的能级。将基态电平的饱和增益设定为小于内部损耗的值,并且设定另一能级以允许注入激光器结构的载流子的量的增加。激光器结构通常是分布式反馈型激光器结构。可以在激光器结构的端面上形成抗反射涂层。 |
申请日期 | 1993-01-08 |
专利号 | US5440581 |
专利状态 | 失效 |
申请号 | US08/002276 |
公开(公告)号 | US5440581 |
IPC 分类号 | H01S5/50 | H01S5/00 | H01S5/34 | H01S5/12 | G02F1/015 | G02F1/025 | H01L33/06 | H01L33/10 | H01L33/30 | H01L33/40 | H01L33/44 | H01S5/042 | H01S3/08 |
专利代理人 | - |
代理机构 | FITZPATRICK,CELLA,HARPER & SCINTO |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/47796 |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | ONO, TAKEO,NITTA, JUN. Semiconductor optical filter and an optical communication system using the same. US5440581[P]. 1995-08-08. |
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