Xi'an Institute of Optics and Precision Mechanics,CAS
| Red light laser | |
| 其他题名 | Red light laser |
| BRENNER, MARY K.; JOHNSON, KLEIN L. | |
| 2008-04-15 | |
| 专利权人 | VIXAR, INC. |
| 公开日期 | 2008-04-15 |
| 授权国家 | 美国 |
| 专利类型 | 授权发明 |
| 摘要 | A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least one constituent concentration and each first mirror pair separated from that one remaining by a first mirror spacer layer with a graded constituent concentration. An active region on the first mirror structure has plural quantum well structures separated by at least one active region spacer layer and there is a second mirror structure on the active region similar to the first but of a second conductivity type. A pair of electrical interconnections is separated by said substrate, said first mirror structure, said active region and said second mirror structure. |
| 其他摘要 | 一种用于发射窄线宽光的半导体材料垂直腔表面发射激光器，包括化合物半导体材料衬底和在第一导电类型的衬底上的第一镜结构中的半导体材料层对，每个在至少一个成分浓度和每个第一镜对与由第一镜面间隔层保留的第一镜面对分开，并具有渐变的成分浓度。第一镜结构上的有源区具有由至少一个有源区间隔层隔开的多个量子阱结构，并且在有源区上存在类似于第一导电类型但第二导电类型的第二镜结构。一对电互连由所述基板，所述第一镜结构，所述有源区和所述第二镜结构分开。 |
| 申请日期 | 2007-03-07 |
| 专利号 | US7359421 |
| 专利状态 | 授权 |
| 申请号 | US11/715834 |
| 公开（公告）号 | US7359421 |
| IPC 分类号 | H01S5/00 | H01S3/08 |
| 专利代理人 | - |
| 代理机构 | KINNEY & LANGE,P.A. |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/47693 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VIXAR, INC. |
| 推荐引用方式 GB/T 7714 | BRENNER, MARY K.,JOHNSON, KLEIN L.. Red light laser. US7359421[P]. 2008-04-15. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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