Method of making tapered semiconductor waveguides

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	Method of making tapered semiconductor waveguides
其他题名	Method of making tapered semiconductor waveguides
	KOCH, THOMAS L.; KOREN, UZIEL
	1990-07-31
专利权人	BELL TELEPHONE LABORATORIES, INCORPORATED, A CORP. OF NY
公开日期	1990-07-31
授权国家	美国
专利类型	授权发明
摘要	Adiabatic mode control and structural reproducibility are achieved by a tapered semiconductor waveguide structure wherein semiconductor guiding layers are interleaved with stop-etch layers and each guiding layer extends further along the propagation axis of the waveguide further than the guiding layer immediately adjacent thereabove to create a staircase-like core or guiding structure. Cladding regions of appropriate semiconductor material having a lower index of refraction than the tapered core structure may be added to completely surround the tapered guiding structure. The profile of the tapered structure is realizable as any desired staircase-like shape such as linear, parabolic, exponential or the like. Additional layers of higher index of refraction semiconductor material may be included in the cladding region to permit additional beam shaping of the expanded spatial mode propagating along the tapered waveguide. Photolithographic masks defining successively larger exposed areas are aligned, deposited over the waveguide structure, and then removed following each etching step. Material selective etching techniques are employed to remove exposed (unmasked) portions of guiding layers. In sequence, the exposed, formerly underlying portions of the stop-etch layers are then removed using material selective etching. Iteration of the above process steps permits a tapered waveguide structure to be defined.
其他摘要	通过锥形半导体波导结构实现绝热模式控制和结构再现性，其中半导体引导层与停止蚀刻层交错，并且每个引导层沿着波导的传播轴进一步延伸得比紧邻其上方的引导层更远以形成楼梯类似核心或指导结构。可以添加具有比锥形芯结构更低折射率的适当半导体材料的包覆区域以完全包围锥形引导结构。锥形结构的轮廓可以实现为任何所需的阶梯状形状，例如线性，抛物线形，指数形等。在包层区域中可以包括附加的较高折射率半导体材料层，以允许沿锥形波导传播的扩展空间模式的附加光束整形。将定义较大的曝光区域的光刻掩模对准，沉积在波导结构上，然后在每个蚀刻步骤之后移除。采用材料选择性蚀刻技术来去除引导层的暴露（未掩蔽）部分。然后，依次使用材料选择性蚀刻去除停止蚀刻层的暴露的，先前下面的部分。上述工艺步骤的迭代允许限定锥形波导结构。
申请日期	1989-08-03
专利号	US4944838
专利状态	失效
申请号	US07/389074
公开（公告）号	US4944838
IPC 分类号	G02B6/136 \| G02B6/13 \| H01L21/02 \| H01L21/306 \| H01S5/00 \| H01S5/323 \| B44C1/22 \| C03C15/00 \| C03C25/06
专利代理人	-
代理机构	RANIERI, GREGORY C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47637
专题	半导体激光器专利数据库
作者单位	BELL TELEPHONE LABORATORIES, INCORPORATED, A CORP. OF NY
推荐引用方式 GB/T 7714	KOCH, THOMAS L.,KOREN, UZIEL. Method of making tapered semiconductor waveguides. US4944838[P]. 1990-07-31.

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