Gallium nitride-based compound semiconductor laser and method of manufacturing the same

OPT OpenIR > 半导体激光器专利数据库

	Gallium nitride-based compound semiconductor laser and method of manufacturing the same
其他题名	Gallium nitride-based compound semiconductor laser and method of manufacturing the same
	ISHIKAWA, MASAYUKI; YAMAMOTO, MASAHIRO; NUNOUE, SHINYA; NISHIO, JOHJI; HATAKOSHI, GENICHI; FUJIMOTO, HIDETOSHI
	1999-11-16
专利权人	KABUSHIKI KAISHA TOSHIBA
公开日期	1999-11-16
授权国家	美国
专利类型	授权发明
摘要	A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.
其他摘要	氮化镓基化合物半导体激光器具有双异质结结构，其中有源层夹在包层之间，在蓝宝石衬底上。在p覆层上形成具有条纹开口部分的GaN电流阻挡层。形成p-GaN掩埋层和接触层，通过该接触层将电流注入到电流阻挡层的开口部分中并且其面积大于开口部分的面积。有源层具有多量子阱结构，该多量子阱结构由通过循环堆叠两种具有不同带隙并且厚度为10nm或更厚的InGaAlN层形成的环状结构构成。
申请日期	1997-07-25
专利号	US5987048
专利状态	失效
申请号	US08/900121
公开（公告）号	US5987048
IPC 分类号	H01S5/323 \| H01S5/00 \| H01S5/223 \| H01S5/22 \| H01S5/02 \| H01S5/042 \| H01S5/20 \| H01S5/30 \| H01S5/32 \| H01S5/343 \| H01S3/19
专利代理人	-
代理机构	OBLON,SPIVAK,MCCLELLAND,MAIER & NEUSTADT,P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47509
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	ISHIKAWA, MASAYUKI,YAMAMOTO, MASAHIRO,NUNOUE, SHINYA,et al. Gallium nitride-based compound semiconductor laser and method of manufacturing the same. US5987048[P]. 1999-11-16.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US5987048.PDF（636KB）	专利		开放获取	CC BY-NC-SA	请求全文