Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device

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	Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
其他题名	Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
	TANAKA, AKIRA; SHIOZAWA, HIDEO; WATANABE, MINORU; GEN-EI, KOICHI; TANAKA, HIROKAZU
	2007-11-13
专利权人	KABUSHIKI KAISHA TOSHIBA
公开日期	2007-11-13
授权国家	美国
专利类型	授权发明
摘要	The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.
其他摘要	本发明提供一种半导体激光器元件，其制造方法，以及多波长单片半导体激光器件，其实现高达到高输出水平的自持脉动并在宽输出范围内实现自持脉动。一种半导体激光元件，其在预定的输出区域中表现出自持脉动，所述半导体激光元件包括：基板;形成在所述基板上的第一导电类型包层;在所述第一导电类型包覆层上形成的有源层，用于通过电流注入发光;形成在所述有源层上的第二导电型第一包层;条纹状的第二导电型第二包层，沿第一方向形成在所述第二导电型第一包层上，使得所述条形第二导电型第二包层的横截面在垂直方向上所述第一方向的形状具有彼此面对的上边缘和下边缘以及连接在所述上边缘和所述下边缘之间的侧边缘的形状，其中其最小宽度为至少70％但不大于100％的最大宽度。
申请日期	2003-11-26
专利号	US7295588
专利状态	失效
申请号	US10/724570
公开（公告）号	US7295588
IPC 分类号	H01S5/00 \| H01S5/22 \| H01S5/065 \| H01S5/223 \| H01S5/323 \| H01S5/343 \| H01S5/40
专利代理人	-
代理机构	HOGAN & HARTSON LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47492
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	TANAKA, AKIRA,SHIOZAWA, HIDEO,WATANABE, MINORU,et al. Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device. US7295588[P]. 2007-11-13.

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