Method and apparatus for improving efficiency in opto-electronic radiation source devices

OPT OpenIR > 半导体激光器专利数据库

	Method and apparatus for improving efficiency in opto-electronic radiation source devices
其他题名	Method and apparatus for improving efficiency in opto-electronic radiation source devices
	GARBUZOV, DMITRI ZALMANOVICH; MENNA, RAYMOND J.
	2006-08-01
专利权人	TRUMPF PHOTONICS, INC.
公开日期	2006-08-01
授权国家	美国
专利类型	授权发明
摘要	A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.
其他摘要	公开了一种用于提高光电器件效率的方法，例如半导体激光器，超发光发光二极管（SLD），增益芯片，光放大器，参见图3。 4B。根据本发明的原理，至少一个阻挡层（70）插入在构成该器件的材料之间的界面处。所述至少一个阻挡层产生阻挡层，所述阻挡层防止电子从包含在波导区域中的器件有源区域泄漏到器件包层区域（66）。在本发明的一个方面，阻挡层（70）形成在具有不同导电类型的半导体材料的结处。阻挡层防止电子进入不同极性的材料。在本发明的另一个方面，低掺杂或未掺杂区域（64）位于阻挡层（70）附近，以减少光学损耗。
申请日期	2001-03-19
专利号	US7084444
专利状态	授权
申请号	US10/471794
公开（公告）号	US7084444
IPC 分类号	H01L29/861 \| H01S5/00 \| H01S5/20 \| H01S5/30 \| H01S5/343
专利代理人	-
代理机构	FISH & RICHARDSON P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47434
专题	半导体激光器专利数据库
作者单位	TRUMPF PHOTONICS, INC.
推荐引用方式 GB/T 7714	GARBUZOV, DMITRI ZALMANOVICH,MENNA, RAYMOND J.. Method and apparatus for improving efficiency in opto-electronic radiation source devices. US7084444[P]. 2006-08-01.

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