Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates

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	Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates
其他题名	Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates
	YOKOTSUKA, TATSUO; TAKAMORI, AKIRA; NAKAJIMA, MASATO; SUZUKI, TOMOKO
	1993-03-02
专利权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
公开日期	1993-03-02
授权国家	美国
专利类型	授权发明
摘要	A method for fabricating a semiconductor laser device wherein a first clad layer is formed on a GaAs monocrystal substrate of one conductivity type. The first clad layer is made of a compound semiconductor of one conductivity type represented by the formula, (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P, wherein 0.4 .ltoreq.X.ltoreq. Then, an active layer of a compound semiconductor of the formula. (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P, wherein 0.ltoreq.y.ltoreq.0.35 is formed on the first clad layer, on which a second clad layer of a compound semiconductor of the other conductivity type represented by the formula defined with respect to the first clad layer. At least one of the first and second clad layers is epitaxially grown at a rate of not larger than 0.5 .mu.m/hour sufficient to form a monolayer superlattice structure therein and the active layer is epitaxially grown at a rate of not less than 2.0 .mu.m/hour.
其他摘要	一种制造半导体激光器件的方法，其中在一种导电类型的GaAs单晶衬底上形成第一覆层。第一包层由下式表示的一种导电类型的化合物半导体制成（Al.sub.x Ga1-x）.0.5 In.sub.0.5 P，其中0.4≤X .ltoreq.1。然后，配方的化合物半导体的活性层。（Al.sub.y Ga.sub.1-y）.sub.0.5 In.sub.0.5 P，其中0.ltoreq.y≤0.35形成在第一包层上，其上第二包层由相对于第一包层定义的通式表示的另一种导电类型的化合物半导体。第一和第二包层中的至少一个以不大于0.5微米/小时的速率外延生长，足以在其中形成单层超晶格结构，并且有源层以不小于2.0的速率外延生长。微米/小时。
申请日期	1991-06-05
专利号	US5190891
专利状态	失效
申请号	US07/710483
公开（公告）号	US5190891
IPC 分类号	H01L33/00 \| H01S5/323 \| H01S5/00 \| H01S5/30 \| H01S3/19 \| H01L21/203
专利代理人	-
代理机构	LOWE,PRICE,LEBLANC & BECKER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47367
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	YOKOTSUKA, TATSUO,TAKAMORI, AKIRA,NAKAJIMA, MASATO,et al. Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates. US5190891[P]. 1993-03-02.