Semiconductor photonic integrated circuit and fabrication process therefor

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	Semiconductor photonic integrated circuit and fabrication process therefor
其他题名	Semiconductor photonic integrated circuit and fabrication process therefor
	SASAKI, TATSUYA; TAKEUCHI, TAKESHI
	1997-12-30
专利权人	VICHEM CORPORATION
公开日期	1997-12-30
授权国家	美国
专利类型	授权发明
摘要	On a surface of an n-InP substrate, a mask of SiO2 layer wide in an active region and narrow in a passive region and having a constant gap width. In a waveguide region defined between the masks, a waveguide structure constituted of an n-InGaAsP guide layer, an undoped InGaAsP optical waveguide layer and a p-InP clad layer is selectively grown to form. Again, utilizing SiO2 layer, a mask is formed on the surface of the p-InP layer in the active region and a pair of masks defining the waveguide structure is formed in a the passive region, and high resistance InP layer is grown. Also, in the active region, a p-InP layer, a p-InGaAs contact layer are selectively grown. By forming SiO2, a window is formed to form p-side electrode. An n-type electrode is formed on the back surface of the substrate, By this, a device having an optical loss in the active region and passive region becomes low, a coupling coefficient between both regions is high. Also, an element capacitance can become small to enable high speed operation.
其他摘要	在n-InP衬底的表面上，SiO 2掩模在有源区中宽，在无源区窄，并且具有恒定的间隙宽度。在掩模之间限定的波导区域中，选择性地生长由n-InGaAsP引导层，未掺杂的InGaAsP光波导层和p-InP包层构成的波导结构。再次，利用SiO2层，在有源区中的p-InP层的表面上形成掩模，并且在无源区中形成限定波导结构的一对掩模，并且生长高电阻InP层。而且，在有源区中，选择性地生长p-InP层，p-InGaAs接触层。通过形成SiO 2，形成窗口以形成p侧电极。在衬底的背表面上形成n型电极，由此，在有源区和无源区中具有光学损耗的器件变低，两个区域之间的耦合系数高。而且，元件电容可以变小以实现高速操作。
申请日期	1996-07-12
专利号	US5703974
专利状态	失效
申请号	US08/680290
公开（公告）号	US5703974
IPC 分类号	G02B6/12 \| H01S5/026 \| H01S5/00 \| H01S5/50 \| H01S5/40 \| H01S5/20 \| H01S5/0625 \| H01L27/15 \| G02B6/122 \| H01S3/19
专利代理人	-
代理机构	HAYES,SOLOWAY,HENNESSEY,GROSSMAN & HAGE,P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47354
专题	半导体激光器专利数据库
作者单位	VICHEM CORPORATION
推荐引用方式 GB/T 7714	SASAKI, TATSUYA,TAKEUCHI, TAKESHI. Semiconductor photonic integrated circuit and fabrication process therefor. US5703974[P]. 1997-12-30.

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