Material systems for long wavelength lasers grown on GaSb or InAs substrates

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	Material systems for long wavelength lasers grown on GaSb or InAs substrates
其他题名	Material systems for long wavelength lasers grown on GaSb or InAs substrates
	BURAK, DARIUSZ
	2004-11-02
专利权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
公开日期	2004-11-02
授权国家	美国
专利类型	授权发明
摘要	A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of GaSb or InAs, and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 2-4 um. The quantum well is made of GaInSbP, GaInSbAs, AlInSbAs, or AlInSbP, and the barrier layers are made of AlInSbP, AlGaSbP, AlInSbAs, AlGaSbAs, or AlSbPAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (DeltaEc and DeltaEv) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the substrate.
其他摘要	能够产生长波长光的垂直腔表面发射激光器（VCSEL）具有GaSb或InAs衬底，以及具有交替量子阱和阻挡层的有源区。目标波长范围优选在2-4μm之间。量子阱由GaInSbP，GaInSbAs，AlInSbAs或AlInSbP制成，势垒层由AlInSbP，AlGaSbP，AlInSbAs，AlGaSbAs或AlSbPAs制成。有源区夹在两个镜堆之间，这两个镜堆最好是外延生长的分布式布拉格反射器。有源区具有大的导带和价带偏移（DeltaEc和DeltaEv），用于在预期VCSEL起作用的宽范围的环境温度下有效载流子限制。可以将有源区设计成在衬底上具有很少或没有晶格应变。
主权项	A laser device comprising: a substrate; a first and second mirror stack, the first mirror stack position proximate to the substrate; a first and second cladding layer, interposing the first and second mirror stack; and an active region, interposing the first and second cladding layer, the active region having at least one quantum well having a first and second face, the first face adjacent to a first barrier layer and the second face adjacent to a second barrier layer, wherein (a) the quantum well includes material selected from the group consisting of Ga.sub.x In.sub.1-x Sb.sub.y P.sub.1-y, Al.sub.x In.sub.1-x Sb.sub.y As.sub.1-y, Ga.sub.x In.sub.1-x Sb.sub.y As.sub.1-y, and Al.sub.x In.sub.1-x Sb.sub.y P.sub.1-y, where x and y have values ranging from 0 to 1; and (b) each of the first and second barrier layers include material selected from the group consisting of Al.sub.s In.sub.1-s Sb.sub.t P.sub.1-t, Al.sub.s Ga.sub.1-s Sb.sub.t P.sub.1-t, Al.sub.s In.sub.1-s Sb.sub.t As.sub.1-t, Al.sub.s Ga.sub.1-s Sb.sub.t As.sub.1-t, and AlSb.sub.s P.sub.t As.sub.1-s-t, where s and t have values ranging from 0 to
申请日期	2002-07-16
专利号	US6813297
专利状态	失效
申请号	US10/196872
公开（公告）号	US6813297
IPC 分类号	H01S5/323 \| H01S5/00 \| H01S5/183 \| H01S5/343
专利代理人	-
代理机构	SHIE, JUDY I.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46625
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	BURAK, DARIUSZ. Material systems for long wavelength lasers grown on GaSb or InAs substrates. US6813297[P]. 2004-11-02.

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