Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties

OPT OpenIR > 半导体激光器专利数据库

	Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
其他题名	Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
	COLDREN, LARRY A.; ALMUNEAU, GUILHEM
	2003-10-07
专利权人	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
公开日期	2003-10-07
授权国家	美国
专利类型	授权发明
摘要	A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) includes alternating layers of different semiconductor materials to improve thermal and electrical characteristics for the VCSEL. Use of particular materials reduces the thermal resistivity of the DBR and allows heat to dissipate quickly during operation of the VCSEL.
其他摘要	用于垂直腔表面发射激光器（VCSEL）的分布式布拉格反射器（DBR）包括不同半导体材料的交替层，以改善VCSEL的热和电特性。使用特定材料降低了DBR的热阻，并允许热量在VCSEL操作期间快速消散。
主权项	A method of enhancing thermal properties of a distributed Bragg reflector, comprising: growing a high refractive index layer including aluminum gallium arsenic antimonide (AlGaAsSb) on a substrate; and growing a low refractive index layer including indium phosphide (InP) on the substrate, the high refractive index layer being lattice-matched to the low refractive index layer to form a layered semiconductor material, wherein use of InP reduces thermal resistivity in the layered semiconductor material.
申请日期	2001-08-21
专利号	US6631154
专利状态	失效
申请号	US09/935000
公开（公告）号	US6631154
IPC 分类号	H01S5/183 \| H01S5/00 \| H01S5/30 \| H01S5/323 \| H01S5/343 \| H01S5/024 \| H01S5/042 \| H01S5/187 \| H01L21/20
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46503
专题	半导体激光器专利数据库
作者单位	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
推荐引用方式 GB/T 7714	COLDREN, LARRY A.,ALMUNEAU, GUILHEM. Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties. US6631154[P]. 2003-10-07.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US6631154.PDF（984KB）	专利		开放获取	CC BY-NC-SA	请求全文