Compound semiconductor light emitting device and process for producing the same

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	Compound semiconductor light emitting device and process for producing the same
其他题名	Compound semiconductor light emitting device and process for producing the same
	MUNAKATA, TSUTOMU; KASHIMA, YASUMASA
	2003-05-13
专利权人	NEOPHOTONICS SEMICONDUCTOR GK
公开日期	2003-05-13
授权国家	美国
专利类型	授权发明
摘要	A compound semiconductor light emitting device that can keep the effect of confining carriers into an active layer and that can improve light emission efficiency. In the device having a first conductive type substrate; and active layer on the first conductive type substrate; a second conductive type sub-layer and a first conductive type sub-layer, in this order from a lower portion to an upper portion of the device, on the first conductive type substrate and at both sides of the active layer; a second conductive type cladding layer on/over the active layer and the first conductive type sub-layer; and a second conductive type contact layer on the second conductive type cladding layer 19. A p-type diffusion barrier layer is further formed between the n-type sub-layer and the p-type cladding layer.
其他摘要	一种化合物半导体发光器件，其能够保持将载流子限制在有源层中的效果并且能够提高发光效率。在具有第一导电型基板的器件中;第一导电型基板上的有源层;第二导电类型子层和第一导电类型子层，从器件的下部到上部依次，在第一导电类型基板上和有源层的两侧;在有源层上/上方的第二导电型包层和第一导电型子层;在第二导电型包层19上形成第二导电型接触层。在n型子层和p型包层之间还形成p型扩散阻挡层。
主权项	A process for producing a compound semiconductor light emitting device, comprising: the first crystal growth step of epitaxially growing an InGaAs active layer and a second conductive type, first InP cladding layer in turn on/over a first conductive type substrate; the step of disposing an etching mask in a stripe form on/over the second conductive type, first InP cladding layer, and etching an area uncovered with the etching mask to such a depth that the etching reaches the first conductive substrate; the second crystal growth step of epitaxially growing a second conductive type InP sub-layer, a first conductive type InP sub-layer, and a second conductive type InP diffusion barrier layer in turn on/over an uncovered area of the first conductive type substrate which is uncovered with the etching mask; the step of removing off the etching mask; and the third crystal growth step of epitaxially growing a second conductive type, second InP cladding layer and a second conductive type InGaAs contact layer in turn on/over uncovered upper surfaces of the second conductive type, first InP cladding layer and the second conductive type diffusion barrier layer.
申请日期	2002-08-26
专利号	US6562649
专利状态	失效
申请号	US10/227412
公开（公告）号	US6562649
IPC 分类号	H01S5/227 \| H01S5/00 \| H01S5/22 \| H01L21/00
专利代理人	-
代理机构	VOLENTINE FRANCOS,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46326
专题	半导体激光器专利数据库
作者单位	NEOPHOTONICS SEMICONDUCTOR GK
推荐引用方式 GB/T 7714	MUNAKATA, TSUTOMU,KASHIMA, YASUMASA. Compound semiconductor light emitting device and process for producing the same. US6562649[P]. 2003-05-13.

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