Semiconductor optical integrated circuits

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	Semiconductor optical integrated circuits
其他题名	Semiconductor optical integrated circuits
	SASAKI, TATSUYA; KITAMURA, MITSUHIRO; HAMAMOTO, KIICHI; KITAMURA, SHOTARO; KOMATSU, KEIRO; SAKATA, YASUTAKA
	1996-10-15
专利权人	NEC CORPORATION
公开日期	1996-10-15
授权国家	美国
专利类型	授权发明
摘要	A semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on the entirety of the passive region by metal organic vapor phase epitaxy and epitaxial layers having a mesa structure in the active region and a plane structure in the passive region are formed. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in both the active and passive regions. The second mask pattern has a constant width. In the active region the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer is provided on the plane structure epitaxial layers.
其他摘要	半导体光学单片集成器件包括半导体衬底，该半导体衬底包括有源区和无源区。包括多量子阱结构的外延层沿波导方向具有带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在第一选择生长区域上，该第一选择生长区域由除了无源区域之外的有源区域中提供的第一掩模图案限定。第一掩模图案沿波导方向具有宽度变化。通过金属有机气相外延在整个无源区上同时和非选择性地生长外延层，并且在有源区中形成具有台面结构的外延层和在无源区中的平面结构。具有脊状结构的包覆层通过金属有机气相外延选择性地生长在由设置在有源和无源区域中的第二掩模图案限定的第二选择性生长区域上。第二掩模图案具有恒定的宽度。在有源区中，脊状包覆层完全嵌入台面结构外延层，并且在无源区中，脊状包覆层设置在平面结构外延层上。
主权项	An optical monolithic-integrated semiconductor device on a semiconductor substrate having active and passive regions, said device comprising: epitaxial layers forming a multiple quantum well structure, said epitaxial layers being provided on only first selective growth areas in said active region, thereby to leave exposed underlying portions of said active region, and said epitaxial layers entirely covering said passive region, said epitaxial layers having variations in band gap energy and thickness along a wave-guide direction, said quantum well structure in said active region having varied band gap energies which are smaller than a band gap energy of said quantum well structure in said passive region, and said epitaxial layers having a mesa structure in said active region and a planar structure in said passive region; and a cladding layer having a ridged structure formed on a second selective growth area overlying said active and passive areas, said cladding layer completely embedding said mesa structure of said epitaxial layers in said active area, and said cladding layer overlying only selected portions of said planar structure of said epitaxial layers in said passive area.
申请日期	1994-01-07
专利号	US5565693
专利状态	失效
申请号	US08/179049
公开（公告）号	US5565693
IPC 分类号	H01S5/40 \| H01S5/026 \| H01S5/00 \| H01S5/0625 \| H01S5/227 \| H01S5/20 \| H01S5/125 \| H01S5/10 \| H01L33/00
专利代理人	-
代理机构	YOUNG & THOMPSON
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46294
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	SASAKI, TATSUYA,KITAMURA, MITSUHIRO,HAMAMOTO, KIICHI,et al. Semiconductor optical integrated circuits. US5565693[P]. 1996-10-15.

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