Be-CONTAINING II-VI BLUE-GREEN LASER DIODES

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	Be-CONTAINING II-VI BLUE-GREEN LASER DIODES
其他题名	Be-CONTAINING II-VI BLUE-GREEN LASER DIODES
	MILLER, THOMAS, J.; HAASE, MICHAEL, A.; BAUDE, PAUL, F.; PASHLEY, MICHAEL, D.
	2002-04-10
专利权人	MINNESOTA MINING AND MANUFACTURING COMPANY
公开日期	2002-04-10
授权国家	欧洲专利局
专利类型	授权发明
摘要	A II-VI compound semiconductor laser diode (10) includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate (12). The layers formed in the pn junction include a first cladding layer (20) of a first conductivity type, a second cladding layer (22) of a second conductivity type, and at least a first guiding layer (14) between the first and second cladding layers (20, 22). A quantum well active layer (18) is positioned within the pn junction. Electrical energy is coupled to the laser diode (10) by first and second electrodes (40, 41). Various layers (14, 16, 20, 22, 36, 38) in the laser diode are formed using Be.
其他摘要	II-VI化合物半导体激光二极管（10）包括多个II-VI半导体层，形成由单晶GaAs半导体衬底（12）支撑的pn结。在pn结中形成的层包括第一导电类型的第一包层（20），第二导电类型的第二包层（22），以及在第一和第二包层之间的至少第一引导层（14）层（20,22）。量子阱有源层（18）位于pn结内。电能通过第一和第二电极（40,41）耦合到激光二极管（10）。使用Be形成激光二极管中的各种层（14,16,20,22,36,38）。
主权项	A II-VI compound semiconductor laser diode, including: a first cladding layer (20) of II-VI semiconductor including Be of a first conductivity type; a first guiding layer (14) of II-VI semiconductor overlaying the first cladding layer; an active layer (18) of II-VI semiconductor overlaying the first guiding layer; a second guiding layer (16) of II-VI semiconductor overlaying the active layer; a second cladding layer (22) of II-VI semiconductor including Be of a second conductivity type overlaying the second guiding layer; wherein at least one of the guiding layers includes Be; and the active layer (18) has an optical transition energy of at least about 200 meV less than the bandgap energy of the guiding layers (14, 16).
申请日期	1997-01-16
专利号	EP1016175B1
专利状态	失效
申请号	EP1997901454
公开（公告）号	EP1016175B1
IPC 分类号	H01S5/00 \| H01S5/32 \| H01S5/327 \| H01S5/34 \| H01S5/347
专利代理人	-
代理机构	VOSSIUS & PARTNER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46167
专题	半导体激光器专利数据库
作者单位	MINNESOTA MINING AND MANUFACTURING COMPANY
推荐引用方式 GB/T 7714	MILLER, THOMAS, J.,HAASE, MICHAEL, A.,BAUDE, PAUL, F.,et al. Be-CONTAINING II-VI BLUE-GREEN LASER DIODES. EP1016175B1[P]. 2002-04-10.