Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof

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	Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof
其他题名	Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof
	ALBRECHT, TONY; LINDER, NORBERT; LUFT, JOHANN
	2010-01-26
专利权人	OSRAM GMBH
公开日期	2010-01-26
授权国家	美国
专利类型	授权发明
摘要	The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
其他摘要	本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个产生辐射的量子阱结构和至少一个用于光学泵浦量子阱结构的泵浦辐射源，其中泵浦辐射源包括边缘发射半导体结构体。产生辐射的量子阱结构和边缘发射半导体结构在公共衬底上外延生长。利用这种单片制造的半导体激光器件，可以有利地实现产生辐射的量子阱结构的非常有效和均匀的光泵浦。还规定了制造本发明的半导体激光器件的方法。
主权项	An optically pumped surface-emitting semiconductor laser device comprising: a radiation-generating quantum confinement structure formed by a semiconductor layer sequence, said radiation-generating quantum confinement structure being provided for generating radiation in a single resonator, said semiconductor layer sequence being epitaxially grown on a common substrate, said single resonator being an external resonator; a pump radiation source with a radiation region for optically pumping the radiation generating quantum confinement structure, said pump radiation source including an edge-emitting semiconductor structure, said edge-emitting semiconductor structure being formed by the semiconductor layer sequence being epitaxially grown on the common substrate; and a boundary surface between the edge-emitting semiconductor structure and the radiation generating quantum confinement structure, the boundary surface being partially reflective.
申请日期	2005-10-12
专利号	US7653111
专利状态	授权
申请号	US11/249094
公开（公告）号	US7653111
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S5/04 \| H01S5/10 \| H01S5/14 \| H01S5/183 \| H01S5/34 \| H01S5/40
专利代理人	-
代理机构	COHEN PONTANI LIEBERMAN & PAVANE LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46114
专题	半导体激光器专利数据库
作者单位	OSRAM GMBH
推荐引用方式 GB/T 7714	ALBRECHT, TONY,LINDER, NORBERT,LUFT, JOHANN. Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof. US7653111[P]. 2010-01-26.