Superluminescent diode and method of manufacturing the same

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	Superluminescent diode and method of manufacturing the same
其他题名	Superluminescent diode and method of manufacturing the same
	PARK, MOON HO; BAEK, YONG SOON; OH, KWANG RYONG
	2009-10-06
专利权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
公开日期	2009-10-06
授权国家	美国
专利类型	授权发明
摘要	A 55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.
其他摘要	公开了具有激光二极管（LD）区域和半导体光放大器（SOA）区域的55μmSLD及其制造方法。 SLD包括：InP衬底，具有LD区域和用于放大从LD区域发射的光的SOA区域;具有BRS（掩埋脊条）结构的光波导，其具有形成在InP衬底上并从SOA区延伸到LD区的谐振条图案的有源层;形成在SOA区域中的有源层上的第一电极，形成在LD区域中的有源层上并与第一电极电隔离的第二电极;以及插入在第一电极和第二电极之间的电流阻挡区域，以使第一电极和第二电极彼此电隔离。
主权项	A superluminescent diode (SLD) comprising: an InP substrate having a LD (laser diode) region and a SOA (semiconductor optical amplifier) region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge stripe) structure having an active layer of resonant stripe pattern formed on the InP substrate and extending from the SOA region to the LD region wherein the active layer comprising a plurality of alternating unstrained barrier layers and strained quantum well layers; a first electrode formed on the active layer in the SOA region; a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode to electrically isolate the first electrode and the second electrode from each other wherein the current blocking region is formed of an ion-implanted InP clad layer that is formed on the active layer.
申请日期	2006-12-07
专利号	US7599403
专利状态	授权
申请号	US11/635195
公开（公告）号	US7599403
IPC 分类号	H01S3/00 \| H01S5/00
专利代理人	-
代理机构	LADAS & PARRY LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46110
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	PARK, MOON HO,BAEK, YONG SOON,OH, KWANG RYONG. Superluminescent diode and method of manufacturing the same. US7599403[P]. 2009-10-06.

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