Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers

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	Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
其他题名	Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
	JOHNSTON, JR., WILBUR D.; KARLICEK, JR., ROBERT F.; LONG, JUDITH A.; WILT, DANIEL P.
	1991-03-12
专利权人	AT&T BELL LABORATORIES
公开日期	1991-03-12
授权国家	美国
专利类型	授权发明
摘要	High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
其他摘要	高电阻率In基化合物III-V族外延层用于防止大量电流流过半导体器件的区域，例如CSBH，DCPBH，EMBH或CMBH激光器，LED，光电二极管，HBT或FET。还公开了一种用于制备掺杂Fe的高电阻率材料的氢化物VPE工艺。 Fe由挥发性卤化Fe化合物提供，并且氢化物的热解延长受到限制，以允许将足够的掺杂剂输送到生长区域。
主权项	A method of fabricating a device, which includes an iron-doped, indium-based, compound Group III-V semiconductor region, comprising the steps of (1) forming a precursor gas comprising a carrier gas, a volatile dopant compound, a volatile indium compound and a Group V hydride, (2) directing said precursor gas through a heated chamber to contact a heated deposition body, and (3) inducing deposition of said compound semiconductor on said body, said carrier gas comprises an inert gas, said dopant compound includes iron, the concentration of hydrogen in said precursor gas is limited to prevent excessive precipitation of iron, and the concentrations of said volatile indium compound at said body and of said Group V hydride are maintained sufficient to result in said deposition.
申请日期	1989-12-15
专利号	US4999315
专利状态	失效
申请号	US07/450973
公开（公告）号	US4999315
IPC 分类号	C30B25/02 \| H01L21/205 \| H01L21/02 \| H01L33/00 \| H01S5/00 \| H01S5/24 \| H01S5/223 \| H01S5/227 \| H01L33/24 \| H01L33/30 \| H01L21/20
专利代理人	-
代理机构	KOBA, W. W.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46090
专题	半导体激光器专利数据库
作者单位	AT&T BELL LABORATORIES
推荐引用方式 GB/T 7714	JOHNSTON, JR., WILBUR D.,KARLICEK, JR., ROBERT F.,LONG, JUDITH A.,et al. Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers. US4999315[P]. 1991-03-12.

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