Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser
其他题名	Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser
	MORI, HIROSHI
	2012-05-22
专利权人	ANRITSU CORPORATION
公开日期	2012-05-22
授权国家	美国
专利类型	授权发明
摘要	A semiconductor optical element includes an n-type substrate, an n-type clad layer formed upward of the n-type substrate, a p-type clad layer formed upward of the n-type substrate, a guide layer, formed between the p-type clad layer and the n-type clad layer, for waveguiding a light, first and second electrodes respectively formed on the bottom surface of the n-type substrate and the upper surface of the p-type clad layer, and a plurality of electric current regulating members provided in the vicinity of the guide layer and regularly arranged along a light waveguide direction in the guide layer. The plurality of electric current regulating members generate an even distribution of a refractive index in the guide layer along the light waveguide direction in the guide layer. The guide layer reflects light with a wavelength which is determined in accordance with the even refractive index distribution.
其他摘要	半导体光学元件包括n型衬底，在n型衬底的上方形成的n型覆盖层，在n型衬底的上方形成的p型覆盖层，在p型之间形成的引导层。用于波导分别形成在n型基板的底表面和p型覆层的上表面上的光，第一和第二电极以及多个电流的类型包层和n型包层调节构件设置在引导层附近并沿引导层中的光波导方向规则地布置。多个电流调节构件在引导层中沿着光波导方向在引导层中产生均匀的折射率分布。引导层反射具有根据均匀折射率分布确定的波长的光。
主权项	A semiconductor optical reflector comprising: an n-type substrate; an n-type clad layer formed as a part of the n-type substrate itself or upward of the n-type substrate; a p-type clad layer formed upward of the n-type substrate; a guide layer which is formed between the p-type clad layer and the n-type clad layer, and which waveguides light; first and second electrodes respectively formed on a bottom surface of the n-type substrate and an upper surface of the p-type clad layer, wherein one of the first and second electrodes is formed as a common electrode and the other of the first and second electrodes is formed as a plurality of individual electrodes;a plurality of electric current regulating members which are provided in a vicinity of the guide layer and which are regularly arranged along a light waveguide direction of the guide layer, wherein the plurality of electric current regulating members: (i) show a refractive index approximately the same as a surrounding object, (ii) provide an even electric current density distribution in the guide layer along the light waveguide direction in a state in which an electric current has been injected between the first and second electrodes, and (iii) generate an even distribution of the refractive index in the guide layer along the light waveguide direction based on the even electric current density distribution, and wherein the plurality of electric current regulating members are formed as at least two electric current block groups having respectively predetermined intervals respectively corresponding to the plurality of individual electrodes; and a heating element which extends in the light waveguide direction of the guide layer along the at least two electric current block groups to vary a temperature of the guide layer, wherein the guide layer reflects light with a given wavelength, which is determined in accordance with the even refractive index distribution, from incident light,wherein the plurality of electric current regulating members show: a first reflection property having a peak reflectance at a wavelength λB1 satisfying a Bragg reflection condition: λB1=2n1Λ1 (wherein, n1 is an equivalent refractive index of a waveguide path) in a state in which an electric current has been injected into the common electrode and into a first one of the plurality of individual electrodes corresponding to a first one of the at least two electric current block groups which has the predetermined interval Λ1 between plural electric current regulating members; and a second reflection property having the peak reflectance at a wavelength λB2 satisfying a Bragg reflection condition: λB2=2n2Λ2 (wherein, n2 is the equivalent refractive index of the waveguide path) in a state in which an electric current has been injected into the common electrode and into a second one of the plurality of individual electrodes corresponding to a second one of the at least two electric current block groups which has the predetermined interval Λ2 between plural electric current regulating members, and wherein one or both of the first and second reflection properties can be arbitrarily selected.
申请日期	2007-10-09
专利号	US8184671
专利状态	失效
申请号	US11/992980
公开（公告）号	US8184671
IPC 分类号	H01S5/00 \| H01S3/10 \| H01S5/12 \| H01S5/125
专利代理人	-
代理机构	HOLTZ,HOLTZ,GOODMAN & CHICK,PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46062
专题	半导体激光器专利数据库
作者单位	ANRITSU CORPORATION
推荐引用方式 GB/T 7714	MORI, HIROSHI. Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser. US8184671[P]. 2012-05-22.