III-V lasers with integrated silicon photonic circuits

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	III-V lasers with integrated silicon photonic circuits
其他题名	III-V lasers with integrated silicon photonic circuits
	CHENG, CHENG-WEI; LIBSCH, FRANK R.; NING, TAK H.; RANA, UZMA; SHIU, KUEN-TING
	2016-08-02
专利权人	GLOBALFOUNDRIES INC.
公开日期	2016-08-02
授权国家	美国
专利类型	授权发明
摘要	III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.
其他摘要	与硅光子电路集成的III-V激光器及其制造方法包括在基板上由III-V半导体形成的三层半导体叠层，其中中间层具有比顶层和底层低的带隙;整个形成在堆叠的第一端的镜面区域，被配置为在堆叠的方向上反射发射的光;以及在堆叠的第二端单片地形成的波导区域，被配置为透射发射的光。
主权项	A method for forming a laser, comprising: etching a high-aspect ratio trench into an insulator layer on a substrate; depositing a three-layer semiconductor stack formed from III-V semiconductors on a substrate, wherein a middle layer has a lower bandgap than a top layer and a bottom layer; monolithically forming a mirror region and a waveguide region in contact with respective ends of the stack; and forming front and back contacts that contact the top and bottom of the stack, respectively.
申请日期	2013-07-24
专利号	US9407066
专利状态	授权
申请号	US13/949973
公开（公告）号	US9407066
IPC 分类号	H01L21/00 \| H01S5/00 \| H01S5/227 \| H01S5/16 \| H01S5/02 \| H01S5/10
专利代理人	LE STRANGE, MICHAEL
代理机构	HOFFMAN WARNICK LLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46030
专题	半导体激光器专利数据库
作者单位	GLOBALFOUNDRIES INC.
推荐引用方式 GB/T 7714	CHENG, CHENG-WEI,LIBSCH, FRANK R.,NING, TAK H.,et al. III-V lasers with integrated silicon photonic circuits. US9407066[P]. 2016-08-02.

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