Semiconductor device and method for producing the same

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	Semiconductor device and method for producing the same
其他题名	Semiconductor device and method for producing the same
	ONISHI, TOSHIKAZU; ADACHI, HIDETO; MANNOU, MASAYA; TAKAMORI, AKIRA
	2003-12-30
专利权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
公开日期	2003-12-30
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2x10cm.
其他摘要	一种半导体激光装置，包括：第一导电类型的半导体衬底;在半导体衬底上提供第一导电类型的包层;在第一导电类型的包层上提供的有源层，有源层具有超晶格结构，该超晶格结构包括在至少一个空腔端面附近的无序区域;在有源层上设置第二导电类型的第一包层;设置在第一包层上的第二导电类型的蚀刻停止层;在蚀刻停止层上设置第二导电类型的第二包层，第二包层形成脊结构，脊结构沿腔长方向延伸并具有预定宽度。在至少一个腔体端面附近的蚀刻停止层中的杂质浓度大于腔体内部的杂质浓度并且等于或小于约2×10 18 cm -3。 >。
主权项	A semiconductor laser device comprising: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width, wherein a concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2.times.10.sup.18 cm.sup.-3, and the etching stop layer is a single layer.
申请日期	2000-05-05
专利号	US6671301
专利状态	授权
申请号	US09/565937
公开（公告）号	US6671301
IPC 分类号	H01S5/30 \| H01S5/227 \| H01S5/22 \| H01S5/16 \| H01S5/00 \| H01S5/223 \| H01S5/34 \| H01S5/343
专利代理人	-
代理机构	RATNERPRESTIA
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46023
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	ONISHI, TOSHIKAZU,ADACHI, HIDETO,MANNOU, MASAYA,et al. Semiconductor device and method for producing the same. US6671301[P]. 2003-12-30.