Group III-V nitride laser devices with cladding layers to suppress defects such as cracking

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	Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
其他题名	Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
	SVERDLOV, BORIS N.
	2002-09-24
专利权人	JDS UNIPHASE CORPORATION
公开日期	2002-09-24
授权国家	美国
专利类型	授权发明
摘要	A Group III-V nitride compound semiconductor light emitting device is constructed without the employing homogeneous layers of AlGaN. Instead of homogeneous AlGaN cladding layers, GaN cladding layers are utilized. Since high temperature growths that accompany the formation of AlGaN layers is no longer required, the stochiometric amount of indium in InxGa1-xN core layers utilized in the active region may be made greater to achieve better electrical and optical properties in the device. The loss of waveguiding achieved by the higher refractive index layers of AlGaN is compensated by the use of core layers of InGaN on adjacent sides of the active region comprising InyGa1-yN layer or layers. Other techniques are disclosed utilizing digital alloying of cladding layers comprising GaN/AlN superlattices or AlxGa1-xN/AlyGa1-yN superlattices, or growing Group III-V nitride devices on selected regions of the growth surface of the substrates so that large stresses are not produced as would be the case with uniform growth over the entire growth surface of the substrate.
其他摘要	构造III-V族氮化物化合物半导体发光器件而不使用AlGaN的均匀层。代替均匀的AlGaN包层，使用GaN包层。由于不再需要伴随AlGaN层形成的高温生长，因此可以使在有源区域中使用的InxGa1-xN核心层中的化学计量的铟更大，以在器件中实现更好的电学和光学性质。通过在包括InyGa1-yN层或多个层的有源区的相邻侧上使用InGaN的核心层来补偿由AlGaN的较高折射率层实现的波导损失。公开了利用包括GaN / AlN超晶格或AlxGa1-xN / AlyGa1-yN超晶格的包层的数字合金化，或在基板的生长表面的选定区域上生长III-V族氮化物器件以便不产生大应力的其他技术。在基材的整个生长表面上均匀生长的情况也是如此。
主权项	A method of manufacturing a Group III-V nitride compound semiconductor device utilizing MOCVD to provide crack-free structure comprising the steps of: forming an n-GaN cladding layer on a substrate; forming a first n-In.sub.x Ga.sub.1-x N core layer on the n-GaN cladding layer; forming at least one active layer on the n-In.sub.x Ga.sub.1-x N core layer, said at least one active layer containing at least one layer of in.sub.y Ga.sub.1-y N where y>x; forming a second core layer of p-In.sub.x Ga.sub.1-x N on the active layer, the formation of the first and second core layers having thicknesses greater than the thickness of the active layer; and forming a p-GaN cladding layer on the second core layer of p-In.sub.x Ga.sub.1-x N; and wherein the steps of forming layers are carried out in different spatial regions of growth over said substrate, said spatial regions of growth being formed in grooves or between ridges formed on a surface of said substrate.
申请日期	2001-06-27
专利号	US6455337
专利状态	失效
申请号	US09/894522
公开（公告）号	US6455337
IPC 分类号	H01S5/343 \| H01S5/00 \| H01S5/32 \| H01S5/20 \| H01L21/20
专利代理人	-
代理机构	ALLEN,DYER,DOPPELT MILBRATH & GILCHRIST,P.A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46001
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	SVERDLOV, BORIS N.. Group III-V nitride laser devices with cladding layers to suppress defects such as cracking. US6455337[P]. 2002-09-24.

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