High power diode laser based source

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	High power diode laser based source
其他题名	High power diode laser based source
	ABELES, JOSEPH H.; BRAUN, ALAN M.; KHALFIN, VIKTOR BORISOVITCH; KWAKERNAAK, MARTIN H.; MARTINELLI, RAMON U.; MOHSENI, HOOMAN
	2009-01-13
专利权人	SRI INTERNATIONAL
公开日期	2009-01-13
授权国家	美国
专利类型	授权发明
摘要	A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.
其他摘要	一种高功率激光系统，包括：多个发射器，每个发射器包括大面积波导和光耦合到大面积波导的多个量子阱区，其中每个量子阱区与大面积波导呈现低模态重叠;光学耦合到发射器的准直器;衍射光栅通过准直器光学耦合到发射器;并且，输出耦合器通过衍射光栅光学耦合到发射器。
主权项	A high power laser system comprising:a plurality of emitters each comprising: an undoped large area waveguide region devoid of quantum well structure; a plurality of ridge waveguide structures positioned separate from and overlaying said large area waveguide region; and at least one quantum well structure formed only in each ridge waveguide structure, each at least one quantum well structure being separated from said undoped large area waveguide region by a doped lower cladding layer positioned substantially therebetween, each ridge waveguide structure and doped lower cladding layer having overlying contacts, the contacts at least partially overlying an upper surface of the undoped large area waveguide region, said undoped large area waveguide region and said at least one quantum well structure cooperating to amplify light of a single spatial mode determined by combination of said plurality of ridge waveguide structures and said undoped large area waveguide region; a collimator optically coupled to said emitters; a diffraction grating optically coupled through said collimator to said emitters; and, an output coupler optically coupled through said diffraction grating to said emitters.
申请日期	2005-05-27
专利号	US7477670
专利状态	失效
申请号	US11/140602
公开（公告）号	US7477670
IPC 分类号	H01S5/00
专利代理人	-
代理机构	LOWENSTEIN SANDLER PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45996
专题	半导体激光器专利数据库
作者单位	SRI INTERNATIONAL
推荐引用方式 GB/T 7714	ABELES, JOSEPH H.,BRAUN, ALAN M.,KHALFIN, VIKTOR BORISOVITCH,et al. High power diode laser based source. US7477670[P]. 2009-01-13.

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