Optical integrated circuit and method for fabricating the same

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	Optical integrated circuit and method for fabricating the same
其他题名	Optical integrated circuit and method for fabricating the same
	HAMAMOTO, KIICHI; SASAKI, TATSUYA; TAKEUCHI, TAKESHI; HAYASHI, MASAKO; KOMATSU, KEIRO; MITO, IKUO; TAGUCHI, KENKO
	1998-08-18
专利权人	NEC CORPORATION
公开日期	1998-08-18
授权国家	美国
专利类型	授权发明
摘要	A semiconductor waveguide layer is provided in an optical semiconductor integrated circuit device comprising a passive region having at least a branch and an active region having at least a laser diode connected to the branch and at least a photo-diode connected to the branch. The active region is in contact with the passive region. The waveguide layer selectively extends over the passive region and the active region. The semiconductor waveguide layer in the active region has a wavelength composition larger than that in the passive region. The waveguide layer has a semiconductor crystal structure which is continuous not only over the active and passive regions but also at a boundary between the active and passive regions.
其他摘要	半导体波导层设置在光学半导体集成电路器件中，该半导体波导层包括至少具有分支的无源区域和至少具有连接到分支的激光二极管的有源区域和至少连接到分支的光电二极管。有源区与无源区接触。波导层选择性地在无源区和有源区上方延伸。有源区中的半导体波导层的波长成分大于无源区中的波长成分。波导层具有半导体晶体结构，该半导体晶体结构不仅在有源区和无源区上连续，而且在有源区和无源区之间的边界处连续。
主权项	An optical semiconductor integrated circuit device comprising: a semiconductor substrate having a passive region and an active region; and a ridged structure constituting at least a branch selectively extending over said passive region, at least a laser diode selectively extending over said active region and at least a photo diode selectively extending over said active region, said ridged structure including a semiconductor waveguide layer sandwiched between optical confinement layers, said semiconductor waveguide layer in said active region having a wavelength composition larger than that in said passive region, wherein said waveguide layer has a semiconductor crystal structure which is continuous not only over said active and passive regions but also at a boundary between said active and passive regions.
申请日期	1996-09-04
专利号	US5796883
专利状态	失效
申请号	US08/706529
公开（公告）号	US5796883
IPC 分类号	G02B6/42 \| H01L31/16 \| H01S5/00 \| H01S5/026 \| H01L31/173 \| G02B6/12 \| H01S5/20 \| H01S5/227
专利代理人	-
代理机构	YOUNG & THOMPSON
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45981
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	HAMAMOTO, KIICHI,SASAKI, TATSUYA,TAKEUCHI, TAKESHI,et al. Optical integrated circuit and method for fabricating the same. US5796883[P]. 1998-08-18.

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