Group III nitride compound semiconductor laser

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	Group III nitride compound semiconductor laser
其他题名	Group III nitride compound semiconductor laser
	HATANO, TAKASHI; IWAYAMA, SHO; KOIKE, MASAYOSHI
	2004-10-05
专利权人	TOYODA GOSEI CO., LTD.
公开日期	2004-10-05
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.
其他摘要	半导体激光器包括蓝宝石衬底，AlN缓冲层，Si掺杂GaN n层，Si掺杂Al0.1Ga0.9N n包覆层，Si掺杂GaN n导向层，具有多量子阱的有源层（MQW）结构，其中GaN阻挡层62的厚度约为35埃，Ga0.95In0.55N阱层61的厚度约为35埃，交替层叠Mg掺杂的GaN p导向层，Mg掺杂的Al0.25Ga0在其上依次形成0.75N的p层，Mg掺杂的Al0.1Ga0.9N p包覆层和掺杂Mg的GaN p接触层。与脊状激光腔部A接触的脊状空穴注入部B形成为具有与Ni电极的宽度w相同的宽度。因为p层具有较大的铝组分，所以蚀刻速率变小并且可以防止在该蚀刻过程中损坏p-引导层。
主权项	A group III nitride compound semiconductor laser including a laser cavity and multiple layers, which are comprised of group III nitride compound semiconductors and deposited on a substrate, comprising: a first layer of a group III nitride compound semiconductor material functioning substantially as a guide layer to an active layer; a second layer of a group III nitride compound semiconductor material having a smaller refractive index compared with said first layer and being disposed above or on said first layer; a third layer of a group III nitride compound semiconductor material, which is formed between said first layer and said second layer or into said second layer and has a larger composition ratio of aluminum (Al) compared with the second layer, said laser cavity being formed by etching multiple layers to provide said laser cavity of a first width, and a carrier injection part formed on said laser cavity part by further etching at least layers above said third layer, corresponding to a second width of an electrode formed above said second layer, said second width being less than said first width, wherein etching is stopped at said third layer.
申请日期	2003-03-07
专利号	US6801559
专利状态	授权
申请号	US10/383229
公开（公告）号	US6801559
IPC 分类号	H01S5/343 \| H01S5/00 \| H01S5/20 \| H01S5/22 \| H01S5/042 \| H01S5/227 \| H01S5/323 \| H01S3/19
专利代理人	-
代理机构	MCGINN & GIBB,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45962
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	HATANO, TAKASHI,IWAYAMA, SHO,KOIKE, MASAYOSHI. Group III nitride compound semiconductor laser. US6801559[P]. 2004-10-05.

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