Optical amplifier-integrated super luminescent diode and external cavity laser using the same

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	Optical amplifier-integrated super luminescent diode and external cavity laser using the same
其他题名	Optical amplifier-integrated super luminescent diode and external cavity laser using the same
	OH, SU HWAN; JU, JUNG JIN
	2010-03-30
专利权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
公开日期	2010-03-30
授权国家	美国
专利类型	授权发明
摘要	Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD. A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.
其他摘要	本发明提供一种超低发光二极管，由于低阈值电流而具有低功耗，并且在低电流操作中具有高输出功率，适用于外腔激光器。用于外腔激光器的超发光二极管分为超发光二极管（SLD）区和半导体光放大器（SOA）区，以提供具有低阈值电流和几乎双输出功率的光源。 SLD。一种超发光二极管集成反射光放大器，包括具有超发光二极管（SLD）区域的基板和用于放大从SLD区域产生的光的半导体光放大器（SOA）区域，具有掩埋异质结构的光波导，掩埋异质结构，包括在衬底上的SLD和SOA区域上延伸并在SOA区域中逐渐变细的有源层;在有源层周围形成电流阻挡层，用于阻挡电流流到除有源层之外的层，电流阻挡层包括具有不同导电类型的半导体层叠层;以及在光波导和电流阻挡层上形成的包层。
主权项	A super luminescent diode (SLD) monolithically integrated with a semiconductor optical amplifier (SOA), comprising: a substrate having an SLD region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region; an optical waveguide having a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.
申请日期	2008-07-30
专利号	US7688870
专利状态	授权
申请号	US12/182543
公开（公告）号	US7688870
IPC 分类号	H01S3/00 \| H01S5/00 \| H01L33/00 \| H01L33/06 \| H01L33/10 \| H01L33/12 \| H01L33/38 \| H01L33/46 \| H01S5/026 \| H01S5/50
专利代理人	-
代理机构	RABIN & BERDO,PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45955
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	OH, SU HWAN,JU, JUNG JIN. Optical amplifier-integrated super luminescent diode and external cavity laser using the same. US7688870[P]. 2010-03-30.

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